Datasheet > AMCC924NE

AMCC924NE

更新时间： 2024-11-18 07:16:51

品牌	Logo	应用领域
ANALOGPOWER		/
页数	文件大小	规格书
3页	93K
描述
Dual N-Channel Logical Level MOSFET

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AMCC924NE 数据手册

Analog Power

AMCC924NE

Dual N-Channel Logical Level MOSFET

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

r_DS(on)and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(OHM)

I_D(A)

9.2

8.5

0.012 @ V_GS= 4.5 V

0.014 @ V_GS= 2.5V

DFN 3x3

Top View

•

Low r_DS(on)provides higher efficiency and

extends battery life

S₁S₂

N-Channel N-Channel

Low thermal impedance copper leadframe

DFN 3x3 saves board space

MOSFET MOSFET

•

Fast switching speed

High performance trench technology

ESD Protected

2000V

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ^oC UNLESS OTHERWISE NOTED)

Parameter Symbol Maximum Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_A=25^oC

T_A=70^oC

9.2

7.5

Continuous Drain Current^a

I_D

Pulsed Drain Current^b

I_DM

I_S

Continuous Source Current (Diode Conduction)^a

Power Dissipation^a

1.5

1.0

T_A=25^oC

T_A=70^oC

P_D

^oC

Operating Junction and Storage Temperature Range

T_J, T_stg-55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

Typ

Max

t <= 10 sec

Maximum Junction-to-Ambient^a

Steady State

^oC/W

100

120

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS-AMCC924NE_B

PRELIMINARY

12 3

中文翻译

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