AMBQ40T65PHRTH
FieldStop Trench IGBT
Features
General Description
High ruggedness
VCE(sat) = 1.61V @ IC = 40A
Ultra-Soft, fast recovery anti-parallel diode
Ultra-narrowed VF distribution control
This IGBT is produced using advanced Magnachip’s Field
Stop Trench IGBT Technology, which provides low VCE(sat)
,
high ruggedness performance and excellent quality.
Positive Temperature coefficient for easy paralleling
AEC-Q101 qualified
Applications
Automotive PTC Heater
General Inverter
TO-247
G : Gate
C : Collector
E : Emitter
G
C
E
Package outline and symbol
Absolute Maximum Ratings
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
650
V
Gate-emitter voltage
VGE
IC
ICpuls
IF
IFpuls
Ptotal
±25
80
V
TC=25°C
TC=100°C
A
DC collector current1)
40
A
Pulsed collector current, tp limited by Tvjmax
Diode forward current1)
120
80
A
TC=25°C
A
TC=100°C
40
A
Diode pulsed current, tp limited by Tvjmax
Total power dissipation
120
307
153
A
TC=25°C
W
W
TC=100°C
Short circuit withstand time
VCE = 400V, VGE = 15V, Tvj = 175°C
tSC
10
μs
Operating Junction temperature range
Tvj
-40~175
-55~175
°C
°C
Storage temperature range
Tstg
Note 1) Current is limited by junction temperature.
Thermal Characteristics
Characteristics
Thermal resistance junction-to-ambient
Symbol
Rth(j-a)
Rating
40
Unit
Thermal resistance junction-to-case for IGBT
Thermal resistance junction-to-case for Diode
Rth(j-c)
0.49
0.9
°C/W
Rth(j-c)
May, 2023. Revision 1.1
Magnachip semiconductor Ltd.
1