Datasheet > AMBQ40T120RFRTH

AMBQ40T120RFRTH

更新时间： 2024-09-14 17:15:39

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
8页	1466K
描述
PackageTO-247

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中文翻译

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AMBQ40T120RFRTH 数据手册

AMBQ40T120RFRTH

FieldStop Trench IGBT

Features

General Description

 High Speed Switching & Low Power Loss

 V_CE(sat)= 1.75V @ I_C= 40A

 High Input Impedance

This IGBT is produced using advanced Magnachip’s Field

Stop Trench IGBT Technology, which provides low V_CE(sat)

high speed switching and high ruggedness performance and

excellent quality.

 t_rr= 285ns (typ.)

 Ultra-Soft, fast recovery anti-parallel diode

 Ultra-narrowed V_Fdistribution control

 Positive Temperature coefficient for easy paralleling

 AEC-Q101 qualified

Applications

 E-compressor

 PTC Heater

TO-247



G : Gate

C : Collector

E : Emitter

Package outline and symbol

Absolute Maximum Ratings

Characteristics

Symbol

Rating

Unit

Collector-emitter voltage

Gate-emitter voltage

V_CES

1200

V_GE

±25

T_C=25°C

DC collector current, limited by T_vjmax

Pulsed collector current, t_plimited by T_vjmax

Diode forward current, limited by T_vjmax

Diode pulsed current, Pulse time limited by T_vjmax

Power dissipation

I_C

I_Cpuls

I_F

T_C=100°C

160

T_C=25°C

T_C=100°C

I_Fpuls

P_D

160

482

242

T_C=25°C

T_C=100°C

Short circuit withstand time

V_CE= 600V, V_GE= 15V, T_C= 150°C

t_SC

μs

Operating Junction temperature range

Storage temperature range

T_vj

-40~175

-55~150

°C

T_stg

Thermal Characteristics

Characteristics

Thermal resistance junction-to-ambient

Symbol

R_th(j-a)

Rating

Unit

Thermal resistance junction-to-case for IGBT

Thermal resistance junction-to-case for Diode

R_th(j-c)

0.31

0.8

°C/W

R_th(j-c)

Jul, 2023. Revision 1.1

Magnachip semiconductor Ltd.

12 3 4 5 6 7 8

中文翻译

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