Datasheet > AMA423P

AMA423P

更新时间： 2024-11-30 07:16:51

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ANALOGPOWER		/
页数	文件大小	规格书
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描述
P-Channel 20-V (D-S) MOSFET

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AMA423P 数据手册

Analog Power

AMA423P

P-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

Key Features:

r_DS(on)(mΩ)

VDS (V)

-20

ID(A)

-6.6

-5.7

-1

• Low r_DS(on)trench technology

• Low thermal impedance

• 2mm x 2mm footprint DFN package

• RDS rated at 1.8V Gate-drive

42 @ V_GS= -4.5V

57 @ V_GS= -2.5V

86 @ V_GS= -1.8V

DFN2x2-8

Typical Applications:

• Battery Powered Instruments

• Portable Computing

• Mobile Phones

• GPS Units and Media Players

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

V_DS

Limit

-20

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±8

T_A=25°C

T_A=70°C

-6.6

-5.3

-20

Continuous Drain Current ^a

Pulsed Drain Current ^b

Continuous Source Current (Diode Conduction) ^a

I_D

I_DM

I_S

T_A=25°C

T_A=70°C

Power Dissipation ^a

P_D

°C

1.92

-55 to 150

Operating Junction and Storage Temperature Range

T_J, T_stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol Maximum

Units

t <= 5 sec

Steady State

Maximum Junction-to-Ambient ^a

°C/W

R_θJA

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS-AMA423P-2010-rev4

12 3 4 5

中文翻译

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