AM83135-005

更新时间： 2024-11-20 22:08:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管射频微波雷达
页数	文件大小	规格书
4页	64K
描述
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

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AM83135-005 数据手册

AM83135-005

RF & MICROWAVE TRANSISTORS

S-BAND RADAR APPLICATIONS

REFRACTORY/GOLD METALLIZATION

EMITTER SITE BALLASTED

5:1 VSWR CAPABILITY

LOW THERMAL RESISTANCE

INPUT/OUTPUT MATCHING

OVERLAY GEOMETRY

METAL/CERAMIC HERMETIC PACKAGE

P_OUT5.0 W MIN. WITH 5.2 dB GAIN

.400 x .400 2NLFL (S042)

hermetically sealed

ORDER CODE

BRANDING

83135-5

AM83135-005

DESCRIPTION

PIN CONNECTION

The AM83135-005 device is a medium power sili-

con bipolar NPN transistor specifically designed

for S-Band radar pulsed driver applications.

This device is capable of operation over a wide

range of pulse widths. duty cycles and tempera-

tures, and can withstand a 5:1 output VSWR.

Low RF thermal resistance, refractory/gold metal-

lization, and computerized automatic wire bond-

ing techniques ensure high reliability and product

consistency.

The AM83135-005 is supplied in the AMPAC

Hermetic Metal/Ceramic package with internal In-

put/Output matching circuitry, and is intended for

military and other high reliability applications.

1. Collector

2. Base

3. Emitter

4. Base

ABSOLUTE MAXIMUM RATINGS (T

= 25°C)

case

Symbol

P_DISS

I_C

Parameter

Value

Unit

1.8

Power Dissipation*

Device Current*

(T_C≤ 100°C)

V_CC

T_J

Collector-Supply Voltage*

Junction Temperature (Pulsed RF Operation)

Storage Temperature

250

T_STG

65 to +200

−

THERMAL DATA

Junction-Case Thermal Resistance*

3.75

R_TH(j-c)

C/W

*Applies only to rated RF amplifier operation

1/4

August 23, 1996

12 3 4

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