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AM7931P PDF预览

AM7931P

更新时间: 2024-10-28 12:52:19
品牌 Logo 应用领域
ANALOGPOWER /
页数 文件大小 规格书
3页 112K
描述
Dual P-Channel 30-V (D-S) MOSFET

AM7931P 数据手册

 浏览型号AM7931P的Datasheet PDF文件第2页浏览型号AM7931P的Datasheet PDF文件第3页 
Analog Power  
AM7931P  
Dual P-Channel 30-V (D-S) MOSFET  
PRODUCT SUMMARY  
These miniature surface mount MOSFETs utilize a  
high cell density trench process to provide low  
rDS(on) and to ensure minimal power loss and heat  
dissipation. Typical applications are DC-DC  
converters and power management in portable and  
battery-powered products such as computers,  
printers, communication equipments.  
VDS (V)  
rDS(on) m()  
13 @ VGS = 10V  
18 @ VGS = 4.5V  
ID (A)  
29  
-30  
25  
Low rDS(on) provides higher efficiency and  
extends battery life  
Low thermal impedance copper leadframe  
SOIC-8PP saves board space  
Fast switching speed  
High performance trench technology  
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NO  
Parameter  
Symbol Limit  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
-30  
V
20  
29  
TA=25oC  
TA=70oC  
Continuous Drain Currenta  
ID  
A
24  
Pulsed Drain Currentb  
IDM  
IS  
50  
Continuous Source Current (Diode Conduction)a  
TA=25oC  
13  
16  
A
Power Dissipationa  
PD  
W
TA=70oC  
10  
oC  
Operating Junction and Storage Temperature Range  
TJ, Tstg -55 to 150  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RθJA  
Maximum Units  
35  
t <= 10 sec  
Maximum Junction-to-Ambienta  
Steady State  
oC/W  
RθJC  
8
Notes  
a.  
b.  
Surface Mounted on 1” x 1” FR4 Board.  
Pulse width limited by maximum junction temperature  
1
Publication Order Number:  
DS-AM7931_A  
PRELIMINARY  

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