Datasheet > AM7930N

AM7930N

更新时间： 2024-10-28 12:52:19

品牌	Logo	应用领域
ANALOGPOWER		/
页数	文件大小	规格书
3页	112K
描述
Dual N-Channel 30-V (D-S) MOSFET

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AM7930N 数据手册

Analog Power

AM7930N

Dual N-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

r_DS(on)and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

V_DS(V)

r_DS(on)m(Ω)

8 @ V_GS= 10V

12 @ V_GS= 4.5V

I_D(A)

SOIC-8PP

Top View

G₁

•

Low r_DS(on)provides higher efficiency and

extends battery life

S₁

N-Channel MOSFET N-Channel MOSFET

Low thermal impedance copper leadframe

SOIC-8PP saves board space

•

Fast switching speed

High performance trench technology

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ^oC UNLESS OTHERWISE NO

Parameter

Symbol Limit

Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_A=25^oC

T_A=70^oC

Continuous Drain Current^a

I_D

Pulsed Drain Current^b

I_DM

I_S

Continuous Source Current (Diode Conduction)^a

T_A=25^oC

Power Dissipation^a

P_D

T_A=70^oC

^oC

Operating Junction and Storage Temperature Range

T_J, T_stg-55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_θJA

Maximum Units

t <= 10 sec

Maximum Junction-to-Ambient^a

Steady State

^oC/W

R_θJC

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS-AM7930_A

PRELIMINARY

12 3

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