生命周期: | Contact Manufacturer | 包装说明: | DIP, |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.71 | 风险等级: | 5.74 |
最长访问时间: | 35 ns | 其他特性: | RETRANSMIT |
周期时间: | 45 ns | JESD-30 代码: | R-PDIP-T28 |
JESD-609代码: | e0 | 长度: | 37.084 mm |
内存密度: | 2304 bit | 内存宽度: | 9 |
功能数量: | 1 | 端子数量: | 28 |
字数: | 256 words | 字数代码: | 256 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 256X9 | |
可输出: | NO | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | DIP | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 并行/串行: | PARALLEL |
座面最大高度: | 5.715 mm | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | TIN LEAD |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 宽度: | 15.24 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AM7200-35RC | AMD |
获取价格 |
HIGH DENSITY FIRST-IN FIRST-OUT (FIFO) 256 X 9-BIT CMOS MEMORY | |
AM7200-40/BXA | ETC |
获取价格 |
x9 Asynchronous FIFO | |
AM7200-50 | AMD |
获取价格 |
HIGH DENSITY FIRST-IN FIRST-OUT (FIFO) 256 X 9-BIT CMOS MEMORY | |
AM7200-50/BXA | ETC |
获取价格 |
x9 Asynchronous FIFO | |
AM7200-50BXA | ROCHESTER |
获取价格 |
RAM BASED FIRST-IN FIRST-OUT useful in a wide range of applications 256x9 FIFO | |
AM7200-50JC | ROCHESTER |
获取价格 |
RAM BASED FIRST-IN FIRST-OUT useful in a wide range of applications 256x9 FIFO | |
AM7200-50JC | AMD |
获取价格 |
HIGH DENSITY FIRST-IN FIRST-OUT (FIFO) 256 X 9-BIT CMOS MEMORY | |
AM7200-50JCTR | ROCHESTER |
获取价格 |
RAM BASED FIRST-IN FIRST-OUT useful in a wide range of applications 256x9 FIFO | |
AM7200-50PC | ROCHESTER |
获取价格 |
RAM BASED FIRST-IN FIRST-OUT useful in a wide range of applications 256x9 FIFO | |
AM7200-50PC | AMD |
获取价格 |
HIGH DENSITY FIRST-IN FIRST-OUT (FIFO) 256 X 9-BIT CMOS MEMORY |