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AM7101P PDF预览

AM7101P

更新时间: 2024-11-25 07:16:55
品牌 Logo 应用领域
ANALOGPOWER /
页数 文件大小 规格书
3页 91K
描述
P-Channel 100-V (D-S) MOSFET

AM7101P 数据手册

 浏览型号AM7101P的Datasheet PDF文件第2页浏览型号AM7101P的Datasheet PDF文件第3页 
Analog Power  
AM7101P  
P-Channel 100-V (D-S) MOSFET  
These miniature surface mount MOSFETs utilize a  
high cell density trench process to provide low  
rDS(on) and to ensure minimal power loss and heat  
dissipation. Typical applications are DC-DC  
converters and power management in portable and  
battery-powered products such as computers,  
printers, PCMCIA cards, cellular and cordless  
telephones.  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) m()  
ID (A)  
-3  
269 @ VGS = -10V  
289 @ VGS = -5.5V  
-100  
-2.9  
DFN3x3-8PP  
Top View  
S
Low rDS(on) provides higher efficiency and  
extends battery life  
8
7
6
5
D
D
D
D
S
S
S
G
1
2
3
4
G
Low thermal impedance copper leadframe  
DFN3x3-8PP saves board space  
Fast switching speed  
D
High performance trench technology  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)  
Parameter Symbol Maximum Units  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
-100  
20  
V
TA=25oC  
TA=70oC  
-3  
-2.5  
50  
Continuous Drain Currenta  
ID  
A
Pulsed Drain Currentb  
IDM  
IS  
Continuous Source Current (Diode Conduction)a  
Power Dissipationa  
-2.1  
3.5  
2.0  
A
TA=25oC  
TA=70oC  
PD  
W
oC  
Operating Junction and Storage Temperature Range  
TJ, Tstg -55 to 150  
THERMALRESISTANCERATINGS  
Parameter  
Symbol Maximum Units  
35  
81  
oC/W  
oC/W  
t<=10sec  
MaximumJunction-to-Ambienta  
R
θJA  
SteadyState  
Notes  
a.  
b.  
Surface Mounted on 1” x 1” FR4 Board.  
Pulse width limited by maximum junction temperature  
1
Publication Order Number:  
DS-AM7101_A  
PRELIMINARY  

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