Datasheet > AM70N03-08D

AM70N03-08D

更新时间： 2024-11-25 07:16:55

品牌	Logo	应用领域
ANALOGPOWER		/
页数	文件大小	规格书
3页	77K
描述
N-Channel 30-V (D-S) MOSFET

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AM70N03-08D 数据手册

Analog Power

AM70N03-08D

N-Channel 30-V (D-S) MOSFET

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

r_DS(on)and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

PRODUCT SUMMARY

V_DS(V)

r_DS(on)m(Ω)

I_D(A)

8.5 @ V_GS= 10V

11.5 @ V_GS= 4.5V

•

Low r_DS(on)provides higher efficiency and

extends battery life

Low thermal impedance copper leadframe

DPAK saves board space

•

Fast switching speed

High performance trench technology

ABSOLUTE MAXIMUM RATINGS (T_A= 25 C UNLESS OTHERWISE NOTED)

Parameter

Symbol

V_DS

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

Continuous Drain Current^a

Pulsed Drain Current^b

Continuous Source Current (Diode Conduction)^a

Power Dissipation^a

T_C=25^oC

I_D

I_DM

I_S

P_D

^oC

Operating Junction and Storage Temperature Range

T_J, T_stg-55 to 175

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^a

Symbol

Maximum Units

^oC/W

R_θJA

R_θJC

^oC/W

3.0

Maximum Junction-to-Case

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS-AM70N03-08_B

PRELIMINARY

12 3

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