Datasheet > AM5932N

AM5932N

更新时间： 2025-08-04 12:52:15

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描述
Dual N-Channel 30-V (D-S) MOSFET

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AM5932N 数据手册

Analog Power

AM5932N

Dual N-Channel 30-V (D-S) MOSFET

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

r_DS(on)and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

PRODUCT SUMMARY

V_DS(V)

r_DS(on)m(Ω)

I_D(A)

35 @ V_GS= 10V

6.4

45 @ V_GS= 4.5V

5.6

CF1206-8

Top View

D₁

D₂

•

Low r_DS(on)provides higher efficiency and

extends battery life

D₁

G₁

G₂

D₁

D₂

Low thermal impedance copper leadframe

DFN2x3 saves board space

S₁

S₂

N-Channel MOSFET N-Channel MOSFET

•

Fast switching speed

High performance trench technology

ABSOLUTE MAXIMUM RATINGS (T_A= 25 C UNLESS OTHERWISE NOTED)

Parameter

Symbol

V_DS

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_A=25^oC

T_A=70^oC

6.4

5.2

Continuous Drain Current^a

I_D

Pulsed Drain Current^b

I_DM

I_S

Continuous Source Current (Diode Conduction)^a

Power Dissipation^a

1.7

2.1

1.3

T_A=25^oC

T_A=70^oC

P_D

^oC

Operating Junction and Storage Temperature Range

T_J, T_stg-55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_θJA

Maximum Units

^oC/W

t <= 10 sec

Steady State

62.5

^oC/W

Maximum Junction-to-Ambient^a

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS-AM5932_A

PRELIMINARY

12 3

中文翻译

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