Datasheet > AM5423P

AM5423P

更新时间： 2024-11-16 12:52:15

品牌	Logo	应用领域
ANALOGPOWER		/
页数	文件大小	规格书
3页	94K
描述
P-Channel 20-V (D-S) MOSFET

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中文翻译

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AM5423P 数据手册

Analog Power

AM5423P

P-Channel 20-V (D-S) MOSFET

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

r_DS(on)and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(OHM)

I_D(A)

0.024 @ V_GS= -4.5V

0.031 @ V_GS= -2.5V

0.041 @ V_GS= -1.8V

-8.4

-7.4

-6.4

-20

•

Low r_DS(on)provides higher efficiency and

extends battery life

Low thermal impedance copper leadframe

DFN3x2-8L saves board space

•

Fast switching speed

High performance trench technology

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ^oC UNLESS OTHERWISE NOTED)

Parameter Symbol Maximum Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

-20

T_A=25^oC

T_A=70^oC

-8.4

-6.9

-60

2.5

1.6

Continuous Drain Current^a

I_D

Pulsed Drain Current^b

I_DM

I_S

Continuous Source Current (Diode Conduction)^a

Power Dissipation^a

T_A=25^oC

T_A=70^oC

P_D

^oC

Operating Junction and Storage Temperature Range

T_J, T_stg-55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol Maximum Units

t <= 5 sec

Steady-State

Maximum Junction-to-Ambient^a

^oC/W

R_ΤΗ

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS-AM5423_A

PRELIMINARY

12 3

中文翻译

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