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AM50P06-15D PDF预览

AM50P06-15D

更新时间: 2024-11-14 07:16:55
品牌 Logo 应用领域
ANALOGPOWER /
页数 文件大小 规格书
5页 331K
描述
P-Channel 60-V (D-S) MOSFET

AM50P06-15D 数据手册

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Analog Power  
AM50P06-15D  
P-Channel 60-V (D-S) MOSFET  
PRODUCT SUMMARY  
Key Features:  
rDS(on) (mΩ)  
VDS (V)  
-60  
ID(A)  
-44  
Low rDS(on) trench technology  
Low thermal impedance  
Fast switching speed  
17 @ VGS = -10V  
23 @ VGS = -4.5V  
-38  
Typical Applications:  
PoE Power Sourcing Equipment  
PoE Powered Devices  
Telecom DC/DC converters  
White LED boost converters  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)  
Parameter  
Symbol  
VDS  
VGS  
ID  
Limit  
-60  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current  
Pulsed Drain Current b  
V
±20  
TC=25°C  
TC=25°C  
-44  
A
IDM  
-150  
-48  
Continuous Source Current (Diode Conduction)  
Power Dissipation  
IS  
A
PD  
50  
W
°C  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
-55 to 175  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol Maximum  
Units  
Maximum Junction-to-Ambient a  
Maximum Junction-to-Case  
RθJA  
40  
°C/W  
RθJC  
3
Notes  
a.  
Surface Mounted on 1” x 1” FR4 Board, drain pad using 2 oz copper, value dependent on PC board thermal  
characteristics  
b.  
Pulse width limited by maximum junction temperature  
© Preliminary  
1
Publication Order Number:  
DS_AM50P06-15D_1A  

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