Datasheet > AM50P02-09D

AM50P02-09D

更新时间： 2024-11-14 12:26:51

品牌	Logo	应用领域
ANALOGPOWER		/
页数	文件大小	规格书
3页	145K
描述
P-Channel 20-V (D-S) MOSFET

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AM50P02-09D 数据手册

Analog Power

AM50P02-09D

P-Channel 20-V (D-S) MOSFET

These miniature surface mount MOSFETs utilize

High Cell Density process. Low r_DS(on)assures

minimal power loss and conserves energy, making

this device ideal for use in power management

circuitry. Typical applications are PWMDC-DC

converters, power management in portable and

battery-powered products such as computers,

printers, battery charger, telecommunication power

system, and telephones power system.

PRODUCT SUMMARY

V_DS(V)

r_DS(on)m(Ω)

9 @ V_GS= -4.5V

13 @ V_GS= -2.5V

I_D(A)

-20

•

Low r_DS(on)Provides Higher Efficiency and

Extends Battery Life

Miniature TO-252 Surface Mount Package

Saves Board Space

•

High power and current handling capability

Extended VGS range (±25) for battery pack

applications

ABSOLUTE MAXIMUM RATINGS (T_A= 25 C UNLESS OTHERWISE NOTED)

Parameter Symbol Maximum Units

Drain-Source Voltage

V_DS

V_GS

I_D

-20

Gate-Source Voltage

±12

Continuous Drain Current^a

Pulsed Drain Current^b

Continuous Source Current (Diode Conduction)^a

Power Dissipation^a

T_A=25^oC

±100

-30

I_DM

I_S

^oC

P_D

Operating Junction and Storage Temperature Range

T_J, T_stg-55 to 175

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_θJA

Maximum Units

Maximum Junction-to-Ambient^a

Maximum Junction-to-Case

^oC/W

1.8

^oC/W

R_θJC

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS-AM50P02-09_D

January, 2005 - Rev. A

PRELIMINARY

12 3

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