Datasheet > AM4990NE

AM4990NE

更新时间： 2024-01-21 22:53:06

品牌	Logo	应用领域
ANALOGPOWER		/
页数	文件大小	规格书
5页	363K
描述
Dual N-Channel 100-V (D-S) MOSFET

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AM4990NE 数据手册

Analog Power

AM4990NE

Dual N-Channel 100-V (D-S) MOSFET

PRODUCT SUMMARY

Key Features:

r_DS(on)(mΩ)

VDS (V)

100

ID(A)

4.2

• Low r_DS(on)trench technology

• Low thermal impedance

• Fast switching speed

81 @ V_GS= 10V

92 @ V_GS= 4.5V

4.0

Typical Applications:

• PoE Power Sourcing Equipment

• PoE Powered Devices

• Telecom DC/DC converters

• White LED boost converters

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

V_DS

Limit

100

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

4.2

Continuous Drain Current ^a

Pulsed Drain Current ^b

Continuous Source Current (Diode Conduction) ^a

I_D

3.3

I_DM

I_S

T_A=25°C

T_A=70°C

2.1

Power Dissipation ^a

P_D

°C

1.3

Operating Junction and Storage Temperature Range

T_J, T_stg

-55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol Maximum

Units

t <= 10 sec

Steady State

62.5

R_θJA

Maximum Junction-to-Ambient ^a

°C/W

110

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS_AM4990NE_1A

12 3 4 5

中文翻译

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