Datasheet > AM4960N

AM4960N

更新时间： 2024-01-08 23:45:06

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ANALOGPOWER		/
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描述
N-Channel 60-V (D-S) MOSFET

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AM4960N 数据手册

Analog Power

AM4960N

N-Channel 60-V (D-S) MOSFET

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

r_DS(on)and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

PRODUCT SUMMARY

V (V)

r_DS(on)m( Ω)

I_D(A)

±4.0

±3.7

89 @V = 10V

104 @V = 4.5V

SOIC-8

Top View

D₁

D₂

G₁

G₂

•

Low r_DS(on)provides higher efficiency and

extends battery life

Low thermal impedance copper leadframe

SOIC-8 saves board space

Fast switching speed

High performance trench technology

S₁

N-Channel N-Channel

MOSFET MOSFET

S₂

•

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ^oC UNLESS OTHERWISE NOTED)

Parameter Symbol Limit Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±20

T_A=25 C

±4.0

±3.3

±25

2.1

1.3

Continuous Drain Current^a

Pulsed Drain Current^b

I_D

T_A=70 C

I_DM

I_S

Continuous Source Current (Diode Conduction)^a

T_A=25 C

P_D

Power Dissipation

T_A=70 C

^oC

Operating Junction and Storage Temperature Range

T, T -55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^a

Symbol

Maximum Units

^oC/W

t <= 10 sec

t <= 5 sec

62.5

110

R_θJA

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS-AM4960_A

PRELIMINARY

12 3 4 5

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