Datasheet > AM4926N

AM4926N

更新时间： 2024-02-03 07:25:00

品牌	Logo	应用领域
ANALOGPOWER		/
页数	文件大小	规格书
2页	135K
描述
Dual N-Channel 20-V (D-S) MOSFET

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AM4926N 数据手册

Analog Power

AM4926N

Dual N-Channel 20-V (D-S) MOSFET

These miniature surface mount MOSFETs utilize

High Cell Density process. Low r_DS(on)assures

minimal power loss and conserves energy, making

this device ideal for use in power management

circuitry. Typical applications are PWMDC-DC

converters, power management in portable and

battery-powered products such as computers,

printers, battery charger, telecommunication power

system, and telephones power system.

PRODUCT SUMMARY

V_DS(V)

r_DS(on)m(Ω)

I_D(A)

58 @ V_GS= 4.5V

82 @ V_GS= 2.5V

5.0

4.2

•

Low r_DS(on)Provides Higher Efficiency and

Extends Battery Life

Miniature SO-8 Surface Mount Package

Saves Board Space

•

High power and current handling capability

Low side high current DC-DC Converter

applications

ABSOLUTE MAXIMUM RATINGS (T_A= 25 C UNLESS OTHERWISE NOTED)

Parameter

Symbol

V_DS

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 12

T_A=25^oC

T_A=70^oC

5.0

4.1

± 30

1.7

2.1

1.3

Continuous Drain Current^a

I_D

Pulsed Drain Current^b

Continuous Source Current (Diode Conduction)^a

Power Dissipation^a

I_DM

I_S

T_A=25^oC

T_A=70^oC

P_D

^oC

Operating Junction and Storage Temperature Range

T_J, T_stg-55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_θJA

Maximum Units

^oC/W

t <= 10 sec

Steady State

62.5

^oC/W

Maximum Junction-to-Ambient^a

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS-AM4926_B

May, 2005 - Rev. A

PRELIMINARY

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