Datasheet > AM4920N

AM4920N

更新时间： 2024-01-15 12:53:05

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描述
Dual N-Channel 30-V (D-S) MOSFET

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AM4920N 数据手册

Analog Power

AM4920N

Dual N-Channel 30-V (D-S) MOSFET

These miniature surface mount MOSFETs utilize

High Cell Density process. Low r_DS(on)assures

minimal power loss and conserves energy, making

this device ideal for use in power management

circuitry. Typical applications are PWMDC-DC

converters, power management in portable and

battery-powered products such as computers,

printers, battery charger, telecommunication power

system, and telephones power system.

PRODUCT SUMMARY

V_DS(V)

r_DS(on)m(Ω)

34 @ V_GS= 10V

41 @ V_GS= 4.5V

I_D(A)

6.9

6.0

•

Low r_DS(on)Provides Higher Efficiency and

Extends Battery Life

Miniature SO-8 Surface Mount Package

Saves Board Space

•

High power and current handling capability

Low side high current DC-DC Converter

applications

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ^oC UNLESS OTHERWISE NOTED)

Parameter

Symbol

V_DS

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

T_A=25^oC

T_A=70^oC

± 6.9

± 5.6

± 40

1.7

Continuous Drain Current^a

Pulsed Drain Current^b

I_D

I_DM

I_S

Continuous Source Current (Diode Conduction)^a

^oC

T_A=25^oC

T_A=70^oC

2.1

Power Dissipation^a

P_D

1.3

Operating Junction and Storage Temperature Range

T_J, T_stg-55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol Maximum Units

^oC/W

t <= 10 sec

Steady-State

62.5

Maximum Junction-to-Ambient^a

R_θJA

^oC/W

110

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS-AM4920_G

September, 2003 - Rev. A

PRELIMINARY

12 3 4 5 6

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