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AM4920N PDF预览

AM4920N

更新时间: 2024-02-16 04:18:35
品牌 Logo 应用领域
ANALOGPOWER /
页数 文件大小 规格书
6页 197K
描述
Dual N-Channel 30-V (D-S) MOSFET

AM4920N 数据手册

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Analog Power  
AM4920N  
Dual N-Channel 30-V (D-S) MOSFET  
These miniature surface mount MOSFETs utilize  
High Cell Density process. Low rDS(on) assures  
minimal power loss and conserves energy, making  
this device ideal for use in power management  
circuitry. Typical applications are PWMDC-DC  
converters, power management in portable and  
battery-powered products such as computers,  
printers, battery charger, telecommunication power  
system, and telephones power system.  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) m()  
34 @ VGS = 10V  
41 @ VGS = 4.5V  
ID (A)  
6.9  
30  
6.0  
1
2
3
4
8
7
Low rDS(on) Provides Higher Efficiency and  
Extends Battery Life  
Miniature SO-8 Surface Mount Package  
Saves Board Space  
6
5
High power and current handling capability  
Low side high current DC-DC Converter  
applications  
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)  
Parameter  
Symbol  
VDS  
Limit  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
30  
V
VGS  
± 20  
TA=25oC  
TA=70oC  
± 6.9  
± 5.6  
± 40  
1.7  
Continuous Drain Currenta  
Pulsed Drain Currentb  
ID  
A
IDM  
IS  
Continuous Source Current (Diode Conduction)a  
A
W
oC  
TA=25oC  
TA=70oC  
2.1  
Power Dissipationa  
PD  
1.3  
Operating Junction and Storage Temperature Range  
TJ, Tstg -55 to 150  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol Maximum Units  
oC/W  
t <= 10 sec  
Steady-State  
62.5  
Maximum Junction-to-Ambienta  
RθJA  
oC/W  
110  
Notes  
a.  
b.  
Surface Mounted on 1” x 1” FR4 Board.  
Pulse width limited by maximum junction temperature  
1
Publication Order Number:  
DS-AM4920_G  
September, 2003 - Rev. A  
PRELIMINARY  

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