Datasheet > AM4812M8R

AM4812M8R

更新时间： 2022-02-26 12:34:27

品牌	Logo	应用领域
创瑞 - AITSEMI		/
页数	文件大小	规格书
8页	472K
描述
30V N-CHANNEL ENHANCEMENT MODE MOSFET

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AM4812M8R 数据手册

AM4812

AiT Semiconductor Inc.

www.ait-ic.com

30V N-CHANNEL ENHANCEMENT MODE

MOSFET

DESCRIPTION

FEATURES

The AM4812 is the N-Channel logic enhancement

mode power field effect transistor which is

produced using high cell density. Advanced trench



30V / 7.8A, R_DS(ON)= 16mΩ (typ.)@V_GS= 10V

30V / 5.8A, R_DS(ON)= 22mΩ (typ.)@V_GS= 4.5V

Super high density cell design for extremely low

R_DS(ON)

technology to provide excellent R_DS(ON)



Exceptional on-resistance and Maximum DC

current capability

This high density process is especially tailored to

minimize on-state resistance.

Available in SOP8 Package

The AM4812 is particularly suited for low voltage

application, and low in-line power loss are needed

in a very small outline surface mount package.

APPLICATION



High Frequency Point-of-Load Synchronous

New working DC-DC Power System

Load Switch

The AM4812 is available in SOP8 Package.

ORDERING INFORMATION

N CHANNEL MOSFET

Package Type

SOP8

Part Number

AM4812M8R

AM4812M8VR

R: Tape & Reel

Note

V: Green Package

AiT provides all Pb free products

Suffix “ V “ means Green Package

REV1.0

- JUN 2011 RELEASED –

- 1 -

12 3 4 5 6 7 8

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