Datasheet > AM4811P

AM4811P

更新时间： 2022-05-19 07:32:10

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描述
P-Channel 30-V (D-S) MOSFET

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AM4811P 数据手册

Analog Power

AM4811P

P-Channel 30-V (D-S) MOSFET

These miniature surface mount MOSFETs utilize

High Cell Density process. Low r_DS(on)assures

minimal power loss and conserves energy, making

this device ideal for use in power management

circuitry. Typical applications are PWMDC-DC

converters, power management in portable and

battery-powered products such as computers,

printers, battery charger, telecommunication power

system, and telephones power system.

PRODUCT SUMMARY

V_DS(V)

r_DS(on)m(Ω)

I_D(A)

9.5

7.5

30 @ V_GS= -10V

-30

52 @ V_GS= -4.5V

•

Low r_DS(on)Provides Higher Efficiency and

Extends Battery Life

Miniature SO-8 Surface Mount Package

Saves Board Space

High power and current handling capability

Extended VGS range (±25) for battery pack

applications

•

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ^oC UNLESS OTHERWISE NOTED)

Parameter Symbol Maximum Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

-30

±25

T_A=25^oC

T_A=70^oC

9.5

8.3

±50

-2.1

3.1

Continuous Drain Current^a

Pulsed Drain Current^b

I_D

I_DM

I_S

Continuous Source Current (Diode Conduction)^a

Power Dissipation^a

T_A=25^oC

T_A=70^oC

P_D

2.6

^oC

Operating Junction and Storage Temperature Range

T_J, T_stg-55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_θJC

R_θJA

Maximum Units

Maximum Junction-to-Case^a

^oC/W

t <= 5 sec

Maximum Junction-to-Ambient^a

t <= 10 sec

^oC/W

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS-AM4811_A

September, 2002 - Rev. A

PRELIMINARY

12 3 4 5

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