Datasheet > AM4530CE

AM4530CE

更新时间： 2024-09-15 12:52:15

品牌	Logo	应用领域
ANALOGPOWER		/
页数	文件大小	规格书
3页	212K
描述
P & N-Channel 32-V (D-S) MOSFET

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AM4530CE 数据手册

Analog Power

AM4530CE

P & N-Channel 32-V (D-S) MOSFET

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

r_DS(on)and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

PRODUCT SUMMARY

V_DS(V)

r_DS(on)m(Ω)

82 @ V_GS= 4.5V

50 @ V_GS= 10V

I_D(A)

4.2

5.3

-4.2

-5.2

80 @ V_GS= -4.5V

52 @ V_GS= -10V

-30

D₁

SOIC-8

S₂

Top View

•

Low r_DS(on)provides higher efficiency and

extends battery life

Low thermal impedance copper leadframe

D₁

D₂

S₁

G₁

S₂

G₂

G₁

G₂

S₁

N-Channel MOSFET

D₂

P-Channel MOSFET

SOIC-8 saves board space

Fast switching speed

High performance trench technology

ESD Protected

2000V

•

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ^oC UNLESS OTHERWISE NOTED)

Parameter Symbol N-Channel P-Channel Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±20

5.3

-30

±20

T_A=25^oC

T_A=70^oC

-5.2

-4.1

-20

-1.3

2.1

Continuous Drain Current^a

Pulsed Drain Current^b

I_D

4.2

1.3

2.1

I_DM

I_S

Continuous Source Current (Diode Conduction)^a

T_A=25^oC

Power Dissipation^a

P_D

T_A=70^oC

1.3

^oC

Operating Junction and Storage Temperature Range

T_J, T_stg

-55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol Maximum Units

^oC/W

62.5

t <= 10 sec

Maximum Junction-to-Ambient^a

R_θJA

^oC/W

110

Steady-State

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS-AM4530CE_A

PRELIMINARY

12 3

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