Datasheet > AM42DL3234GT75IT

AM42DL3234GT75IT

更新时间： 2024-11-14 03:13:03

品牌	Logo	应用领域
飞索 - SPANSION		静态存储器
页数	文件大小	规格书
64页	1060K
描述
Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA73, 8 X 11.60 MM, FBGA-73

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AM42DL3234GT75IT 数据手册

PRELIMINARY

Am42DL32x4G

Stacked Multi-Chip Package (MCP) Flash Memory and pSRAM

32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash

Memory and 4 Mbit (256 K x 16-Bit) Pseudo Static RAM

DISTINCTIVE CHARACTERISTICS

SOFTWARE FEATURES

MCP Features

■ Power supply voltage of 2.7 to 3.3 volt

■ Data Management Software (DMS)

—

AMD-supplied software manages data programming and

erasing, enabling EEPROM emulation

Eases sector erase limitations

■ High performance

—

Flash Access time as fast as 70 ns

Pseudo SRAM access time as fast as 55 ns

—

■ Supports Common Flash Memory Interface (CFI)

■ Erase Suspend/Erase Resume

■ Package

—

73-Ball FBGA

—

Suspends erase operations to allow programming in same

bank

■ Operating Temperature

—

–40°C to +85°C

■ Data# Polling and Toggle Bits

—

Provides a software method of detecting the status of

program or erase cycles

Flash Memory Features

■ Unlock Bypass Program command

ARCHITECTURAL ADVANTAGES

—

Reduces overall programming time when issuing multiple

program command sequences

■ Simultaneous Read/Write operations

—

Data can be continuously read from one bank while

executing erase/program functions in other bank

Zero latency between read and write operations

HARDWARE FEATURES

—

■ Any combination of sectors can be erased

■ Secured Silicon (SecSi) Sector: Extra 256 Byte sector

■ Ready/Busy# output (RY/BY#)

—

Factory locked and identifiable: 16 bytes available for

secure, random factory Electronic Serial Number; verifiable

as factory locked through autoselect function.

Customer lockable: Sector is one-time programmable. Once

locked, data cannot be changed

—

Hardware method for detecting program or erase cycle

completion

—

■ Hardware reset pin (RESET#)

—

Hardware method of resetting the internal state machine to

reading array data

■ Zero Power Operation

Sophisticated power management circuits reduce power

consumed during inactive periods to nearly zero

—

■ WP#/ACC input pin

—

Write protect (WP#) function allows protection of two outermost

boot sectors, regardless of sector protect status

■ Top or bottom boot block

—

Acceleration (ACC) function accelerates program timing

■ Manufactured on 0.17 µm process technology

■ Compatible with JEDEC standards

■ Sector protection

—

Hardware method of locking a sector, either in-system or

using programming equipment, to prevent any program or

erase operation within that sector

—

Pinout and software compatible with single-power-supply

flash standard

—

Temporary Sector Unprotect allows changing data in

protected sectors in-system

PERFORMANCE CHARACTERISTICS

■ High performance

—

Access time as fast as 70 ns

Pseudo SRAM Features

■ Power dissipation

Program time: 4 µs/word typical utilizing Accelerate function

■ Ultra low power consumption (typical values)

—

Operating: 22 mA maximum for 70 ns, 30 mA maximum for

—

2 mA active read current at 1 MHz

55 ns

10 mA active read current at 5 MHz

200 nA in standby or automatic sleep mode

—

Standby: 10 µA maximum

■ CE1s# and CE2s Chip Select

■ Minimum 1 million write cycles guaranteed per sector

■ 20 Year data retention at 125°C

■ Power down features using CE1s# and CE2s

■ Data retention supply voltage: 1.5 to 3.3 volt

■ Byte data control: LB#s (DQ7–DQ0), UB#s (DQ15–DQ8)

—

Reliable operation for the life of the system

This document contains information on a product under development at Advanced Micro Devices. The information

is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed

product without notice.

Publication# 25822 Rev: A Amendment/+4

Issue Date: March 14, 2003

Refer to AMD’s Website (www.amd.com) for the latest information.

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与AM42DL3234GT75IT相关器件

型号	品牌	获取价格	描述	数据表
AM42DL3234GT85FT	SPANSION	获取价格	Memory Circuit, 2MX16, CMOS, PBGA73, 8 X 11.60 MM, FBGA-73
AM42DL3234GT85IT	AMD	获取价格	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem
AM42DL3234GT85IT	SPANSION	获取价格	Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA73, 8 X 11.60 MM, FBGA-73
AM42DL3244GB25IT	AMD	获取价格	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem
AM42DL3244GB30IT	AMD	获取价格	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem
AM42DL3244GB35IT	AMD	获取价格	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem
AM42DL3244GB40IT	AMD	获取价格	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem
AM42DL3244GB55IT	AMD	获取价格	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem
AM42DL3244GB70FT	SPANSION	获取价格	Memory Circuit, 2MX16, CMOS, PBGA73, 8 X 11.60 MM, FBGA-73
AM42DL3244GB70IT	AMD	获取价格	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem

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