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AM40P06-135P PDF预览

AM40P06-135P

更新时间: 2024-11-29 07:16:55
品牌 Logo 应用领域
ANALOGPOWER /
页数 文件大小 规格书
3页 121K
描述
P-Channel 60-V (D-S) MOSFET

AM40P06-135P 数据手册

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Analog Power  
AM40P06-135P  
P-Channel 60-V (D-S) MOSFET  
These miniature surface mount MOSFETs utilize a  
high cell density trench process to provide low  
rDS(on) and to ensure minimal power loss and heat  
dissipation. Typical applications are DC-DC  
converters and power management in portable and  
battery-powered products such as computers,  
printers, PCMCIA cards, cellular and cordless  
telephones.  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) m()  
ID (A)  
135 @ VGS = -10V  
150 @ VGS = -4.5V  
-39a  
-60  
S
D
Low rDS(on) provides higher efficiency and  
extends battery life  
Low thermal impedance copper leadframe  
TO-220 saves board space  
G
Fast switching speed  
High performance trench technology  
P-Channel MOSFET  
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)  
Parameter  
Symbol  
VDS  
Limit  
-60  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
20  
Continuous Drain Currenta  
Pulsed Drain Currentb  
Continuous Source Current (Diode Conduction)a  
Power Dissipationa  
TC=25oC  
TC=25oC  
-90  
-390  
-110  
300  
ID  
A
IDM  
IS  
A
PD  
W
oC  
Operating Junction and Storage Temperature Range  
TJ, Tstg -55 to 175  
THERMALRESISTANCERATINGS  
Parameter  
Symbol Maximum Units  
MaximumJunction-to-Ambienta  
oC/W  
oC/W  
R
62.5  
0.5  
θJA  
MaximumJunction-to-Case  
R
θJC  
Notes  
a.  
b.  
Package Limited  
Pulse width limited by maximum junction temperature  
1
Publication Order Number:  
DS-AM40P06-135_A  
PRELIMINARY  

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