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AM3993P PDF预览

AM3993P

更新时间: 2024-09-30 12:26:43
品牌 Logo 应用领域
ANALOGPOWER /
页数 文件大小 规格书
5页 152K
描述
P-Channel 30-V (D-S) MOSFET

AM3993P 数据手册

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Analog Power  
AM3993P  
P-Channel 30-V (D-S) MOSFET  
These miniature surface mount MOSFETs utilize  
High Cell Density process. Low rDS(on) assures  
minimal power loss and conserves energy, making  
this device ideal for use in power management  
circuitry. Typical applications are DC-DC  
converters, power management in portable and  
battery-powered products such as computers,  
printers, PCMCIA cards, cellular and cordless  
telephones.  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (OHM)  
ID (A)  
0.130 @ VGS = -10V  
0.190 @ VGS = -4.5V  
S1  
-2.5  
-1.9  
-30  
TSOP-6  
Top View  
S2  
Low rDS(on) Provides Higher Efficiency and  
Extends Battery Life  
G2  
G1  
G1  
S2  
G2  
1
2
3
6
5
4
D1  
S1  
D2  
Miniature TSOP-6 Surface Mount Package  
Saves Board Space  
D1  
D2  
P-Channel MOSFET  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)  
Parameter Symbol Maximum Units  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
-30  
V
±20  
TA=25oC  
TA=70oC  
-2.5  
-1.9  
-10  
Continuous Drain Currenta  
ID  
A
Pulsed Drain Currentb  
Continuous Source Current (Diode Conduction)a  
Power Dissipationa  
IDM  
IS  
A
±1.6  
1.15  
0.7  
TA=25oC  
TA=70oC  
PD  
W
oC  
Operating Junction and Storage Temperature Range  
TJ, Tstg -55 to 150  
THERMAL RESISTANCE RATINGS  
Parameter  
t <= 10 sec  
Maximum Junction-to-Ambienta  
Steady State  
Typ  
93  
Max  
110  
150  
Symbol  
RthJA  
oC/W  
130  
Notes  
a.  
b.  
Surface Mounted on 1” x 1” FR4 Board.  
Pulse width limited by maximum junction temperature  
1
Publication Order Number:  
DS-AM3993_B  
February, 2005 - Rev. A  
PRELIMINARY  

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