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AM3962NE PDF预览

AM3962NE

更新时间: 2024-09-30 12:52:15
品牌 Logo 应用领域
ANALOGPOWER /
页数 文件大小 规格书
3页 209K
描述
N-Channel 60-V (D-S) MOSFET

AM3962NE 数据手册

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Analog Power  
AM3962NE  
N-Channel 60-V (D-S) MOSFET  
These miniature surface mount MOSFETs  
utilize a high cell density trench process to  
provide low rDS(on) and to ensure minimal  
power loss and heat dissipation. Typical  
applications are DC-DC converters and  
power management in portable and  
battery-powered products such as  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) ()  
0.153 @ VGS = 10V  
0.185 @ VGS = 4.5V  
D1  
ID (A)  
2.3  
2.1  
60  
D2  
TSOP-6  
Top View  
computers, printers, PCMCIA cards,  
cellular and cordless telephones.  
G1  
G2  
G1  
S2  
G2  
1
2
3
6
5
4
D1  
S1  
D2  
Low rDS(on) provides higher efficiency and  
extends battery life  
Low thermal impedance copper leadframe  
TSOP-6 saves board space  
S1  
N-Channel N-Channel  
MOSFET MOSFET  
S2  
Fast switching speed  
High performance trench technology  
ESD Protected  
2000V  
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)  
Parameter  
Symbol  
VDS  
VGS  
Limit  
60  
±20  
2.3  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
V
TA=25oC  
TA=70oC  
Continuous Drain Currenta  
Pulsed Drain Currentb  
ID  
A
1.9  
8
1.05  
1.15  
0.7  
IDM  
IS  
Continuous Source Current (Diode Conduction)a  
A
W
oC  
TA=25oC  
Power Dissipationa  
PD  
TA=70oC  
Operating Junction and Storage Temperature Range  
TJ, Tstg -55 to 150  
THERMAL RESISTANCE RATINGS  
Parameter  
t <= 10 sec  
Maximum Junction-to-Ambienta  
Steady-State  
Symbol  
Maximum Units  
oC/W  
100  
RθJA  
166  
oC/W  
Notes  
a.  
b.  
Surface Mounted on 1” x 1” FR4 Board.  
Pulse width limited by maximum junction temperature  
1
Publication Order Number:  
DS-AM3962NE_A  
PRELIMINARY  

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