Datasheet > AM3904N

AM3904N

更新时间： 2024-09-30 12:52:15

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ANALOGPOWER		/
页数	文件大小	规格书
5页	240K
描述
Dual N-Channel Logic Level MOSFET

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AM3904N 数据手册

Analog Power

AM3904N

Dual N-Channel Logic Level MOSFET

These miniature surface mount MOSFETs utilize

High Cell Density process. Low r_DS(on)assures

minimal power loss and conserves energy, making

this device ideal for use in power management

circuitry. Typical applications are logic switch

control, power management in portable and battery-

powered products such as computers, printers,

PCMCIA cards, cellular and cordless telephones.

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(OHM)

0.45 @ V_GS= 4.5 V

0.63 @ V_GS= 2.5V

I_D(A)

0.5

0.2

•

Low r_DS(on)Provides Higher Efficiency and

Extends Battery Life

Miniature TSOP-6 Surface Mount Package

Saves Board Space

•

Very fast switching

Gate to Source Zener Diode ESD Protect

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ^oC UNLESS OTHERWISE NOTED)

Parameter Symbol Maximum Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_A=25^oC

T_A=70^oC

0.7

0.58

Continuous Drain Current^a

I_D

Pulsed Drain Current^b

Continuous Source Current (Diode Conduction)^a

Power Dissipation^a

I_DM

I_S

±0.3

0.9

0.7

T_A=25^oC

T_A=70^oC

P_D

^oC

Operating Junction and Storage Temperature Range

T_J, T_stg-55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol Maximum Units

t <= 5 sec

Steady-State

140

180

Maximum Junction-to-Ambient^a

^oC/W

R_ΤΗ

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS-AM3904_B

July, 2002 - Rev. A

PRELIMINARY

12 3 4 5

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