Datasheet > AM3826N

AM3826N

更新时间： 2024-09-30 12:52:15

品牌	Logo	应用领域
ANALOGPOWER		肖特基二极管
页数	文件大小	规格书
5页	286K
描述
N-Channel 20-V (D-S) MOSFET With Schottky Diode

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AM3826N 数据手册

Analog Power

AM3826N

N-Channel 20-V (D-S) MOSFET With Schottky Diode

MOSFET PRODUCT SUMMARY

V (V)

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

r_DS(on)and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

r_DS(on)(OHM) I_D(A)

0.047 @V =-4.5V ±4.1

0.055 @V =-2.5V ±3.8

SCHOTTKY PRODUCT SUMMARY

V (V)

Diode ForwardVoltage

V (V)

I_F(A)

1.0

0.48V@1.0A

TSOP-6

•

Low r_DS(on)provides higher efficiency and

extends battery life

Low thermal impedance copper leadframe

TSOP-6 saves board space

Top View

N/C

•

Fast switching speed

High performance trench technology

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ^oC UNLESS OTHERWISENOTED)

Parameter

Drain-Source Voltage (MOSFET)

Reverse Voltage (Schottky)

Symbol Maximum Units

V_DS

V_KA

V_GS

±8

±4.1

±3.3

±8

1.05

0.5

1.15

0.7

1.0

Gate-Source Voltage (MOSFET)

T_A=25 C

Continuous Drain Current (T =150 C) (MOSFET)^a

I_D

T_A=70 C

Pulsed Drain Current (MOSFET)^b

I_DM

I_S

I_F

Continuous Source Current (MOSFET Diode Conduction)^a

Average Forward Current (Schottky)

Pulsed Forward Current (Schottky)

I_FM

T_A=25 C

Maximum Power Dissipation (MOSFET)^a

T_A=70 C

P_D

^oC

T_A=25 C

Maximum Power Dissipation (Schottky)^a

T_A=70 C

0.6

Operating Junction and Storage Temperature Range

T, T -55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Typ

130

Max

110

150

Symbol

R_thJA

t <= 10 sec

Maximum Junction-to-Ambient^a

^oC/W

Steady State

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS-AM3826_A

PRELIMINARY

12 3 4 5

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