Datasheet > AM3808NE

AM3808NE

更新时间： 2024-09-30 07:16:55

品牌	Logo	应用领域
ANALOGPOWER		/
页数	文件大小	规格书
5页	392K
描述
Dual N-Channel 20-V (D-S) MOSFET

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中文翻译

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AM3808NE 数据手册

Analog Power

AM3808NE

Dual N-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

Key Features:

r_DS(on)(mΩ)

VDS (V)

ID(A)

• Low r_DS(on)trench technology

• Low thermal impedance

• Fast switching speed

20 @ V_GS= 4.5V

28 @ V_GS= 2.5V

Typical Applications:

• Battery Powered Instruments

• Portable Computing

• Mobile Phones

• GPS Units and Media Players

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

V_DS

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±8

T_A=25°C

3.6

Continuous Drain Current ^a

Pulsed Drain Current ^b

Continuous Source Current (Diode Conduction) ^a

I_D

T_A=100°C

I_DM

I_S

T_A=25°C

0.83

0.3

Power Dissipation ^a

P_D

°C

T_A=100°C

Operating Junction and Storage Temperature Range

T_J, T_stg

-55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol Maximum

Units

t <= 10 sec

Steady State

110

Maximum Junction-to-Ambient ^a

°C/W

R_θJA

150

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS_AM3808NE_1A

12 3 4 5

中文翻译

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