Datasheet > AM3548C

AM3548C

更新时间： 2024-12-01 12:26:43

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描述
N & P-Channel 40-V (D-S) MOSFET

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AM3548C 数据手册

Analog Power

AM3548C

N & P-Channel 40-V (D-S) MOSFET

These miniature surface mount MOSFETs

utilize a high cell density trench process to

provide low r_DS(on)and to ensure minimal

power loss and heat dissipation. Typical

applications are DC-DC converters and

power management in portable and

battery-powered products such as

PRODUCT SUMMARY

V (V)

r_DS(on)(Ω)

I_D(A)

3.7

3.3

-2.7

-2.2

0.063 @ V_GS= 10V

0.082 @ V_GS= 4.5V

0.172 @ V_GS=-10V

0.240 @ V_GS=-4.5V

-40

computers, printers, PCMCIA cards,

cellular and cordless telephones.

TSOP-6

D₁

S₂

D₂

Top View

•

Low r_DS(on)provides higher efficiency and

extends battery life

Low thermal impedance copper leadframe

TSOP-6 saves board space

G₂

G₁

S₁

N-Channel MOSFET

P-Channel MOSFET

•

Fast switching speed

High performance trench technology

ABSOLUTE MAXIMUM RATINGS (T_A= 25 C UNLESS OTHERWISE NOTED)

Parameter Symbol N-Channel P-Channel Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±20

3.7

-40

±20

-2.7

-2.1

-8

T_A=25^oC

T_A=70^oC

Continuous Drain Current^a

Pulsed Drain Current^b

I_D

2.9

1.05

I_DM

I_S

Continuous Source Current (Diode Conduction)^a

-1.05

T_A=25^oC

1.15

0.7

Power Dissipation^a

P_D

T_A=70^oC

^oC

Operating Junction and Storage Temperature Range

T_J, T_stg

-55 to 150

THERMAL RESISTANCE RATINGS

N-Channel

P-Channel

Parameter

Symbol

Unit

Typ

Max

Typ

Max

t <= 10 sec

Steady State

110

150

110

150

Maximum Junction-to-Ambient^a

^oC/W

R_thJA

130

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS-AM3548_A

PRELIMINARY

12 3

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