Datasheet > AM3492NE

AM3492NE

更新时间： 2024-09-15 07:16:55

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ANALOGPOWER		/
页数	文件大小	规格书
5页	329K
描述
N-Channel 150-V (D-S) MOSFET

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AM3492NE 数据手册

Analog Power

AM3492NE

N-Channel 150-V (D-S) MOSFET

PRODUCT SUMMARY

Key Features:

r_DS(on)(mΩ)

VDS (V)

150

ID(A)

1.1

• Low r_DS(on)trench technology

• Low thermal impedance

• Fast switching speed

1100 @ V_GS= 10V

1300 @ V_GS= 4.5V

1.0

Typical Applications:

• White LED boost converters

• Automotive Systems

• Industrial DC/DC Conversion Circuits

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

V_DS

Limit

150

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

1.1

Continuous Drain Current ^a

Pulsed Drain Current ^b

Continuous Source Current (Diode Conduction) ^a

I_D

0.9

I_DM

I_S

1.7

T_A=25°C

T_A=70°C

Power Dissipation ^a

P_D

°C

1.3

Operating Junction and Storage Temperature Range

T_J, T_stg

-55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol Maximum Units

t <= 10 sec

Steady State

62.5

Maximum Junction-to-Ambient ^a

°C/W

R_θJA

110

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS_AM3492NE_1A

12 3 4 5

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