Datasheet > AM3472N

AM3472N

更新时间： 2024-09-15 12:50:19

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描述
N-Channel 100V (D-S) MOSFET

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AM3472N 数据手册

Analog Power

AM3472N

N-Channel 100V (D-S) MOSFET

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

r_DS(on)and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(Ω)

I_D(A)

0.170 @ V_GS= 10 V

0.185 @ V_GS= 5.5V

2.9

2.7

100

TSOP-6

Top View

D₁

•

Low r_DS(on)provides higher efficiency and

extends battery life

G₁

Low thermal impedance copper leadframe

TSOP-6 saves board space

•

Fast switching speed

S₁

N-Channel MOSFET

High performance trench technology

ABSOLUTE MAXIMUM RATINGS (T_A= 25 C UNLESS OTHERWISE NOTED)

Parameter Symbol Maximum Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current^a

Pulsed Drain Current^b

Continuous Source Current (Diode Conduction)^a

Power Dissipation^a

V_DS

V_GS

I_D

100

T_A=25^oC

2.9

I_DM

I_S

^oC

1.1

2.0

P_D

Operating Junction and Storage Temperature Range

T_J, T_stg-55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Typ

Max

Symbol

R_thJA

t <= 10 sec

110

150

Maximum Junction-to-Ambient^a

^oC/W

Steady State

130

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS-AM3472_A

PRELIMINARY

12 3

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