Datasheet > AM3470N

AM3470N

更新时间： 2024-09-15 12:26:43

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ANALOGPOWER		/
页数	文件大小	规格书
3页	181K
描述
N-Channel 100V (D-S) MOSFET

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AM3470N 数据手册

Analog Power

AM3470N

N-Channel 100V (D-S) MOSFET

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

r_DS(on)and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

PRODUCT SUMMARY

V (V)

r_DS(on)(Ω)

I_D(A)

2.2

2.0

0.280 @V = 10 V

100

0.355 @V = 5.5V

TSOP-6

Top View

D₁

•

Low r_DS(on)provides higher efficiency and

extends battery life

Low thermal impedance copper leadframe

TSOP-6 saves board space

Fast switching speed

High performance trench technology

G₁

•

S₁

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ^oC UNLESS OTHERWISE NOTED)

Parameter Symbol Maximum Units

Drain-Source Voltage

V_DS

V_GS

I_D

I_DM

I_S

100

±20

2.2

±10

1.1

2.0

Gate-Source Voltage

Continuous Drain Current^a

Pulsed Drain Current^b

T_A=25 C

Continuous Source Current (Diode Conduction)^a

^oC

P_D

Power Dissipation

T_A=25 C

Operating Junction and Storage Temperature Range

T, T -55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Typ

130

Max

110

150

Symbol

R_thJA

t <= 10 sec

Maximum Junction-to-Ambient^a

^oC/W

Steady State

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS-AM3470_C

PRELIMINARY

12 3

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