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AM29LV640ML101EF PDF预览

AM29LV640ML101EF

更新时间: 2024-09-25 13:01:27
品牌 Logo 应用领域
飞索 - SPANSION /
页数 文件大小 规格书
62页 1108K
描述
Flash, 4MX16, 100ns, PDSO56, MO-142B, TSOP-56

AM29LV640ML101EF 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TSOP1包装说明:MO-142B, TSOP-56
针数:56Reach Compliance Code:compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.33Is Samacsys:N
最长访问时间:100 ns备用内存宽度:8
启动块:BOTTOM/TOPJESD-30 代码:R-PDSO-G56
JESD-609代码:e3长度:18.4 mm
内存密度:67108864 bit内存集成电路类型:FLASH
内存宽度:16湿度敏感等级:3
功能数量:1端子数量:56
字数:4194304 words字数代码:4000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:4MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
编程电压:3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:MATTE TIN
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
类型:NOR TYPE宽度:14 mm
Base Number Matches:1

AM29LV640ML101EF 数据手册

 浏览型号AM29LV640ML101EF的Datasheet PDF文件第2页浏览型号AM29LV640ML101EF的Datasheet PDF文件第3页浏览型号AM29LV640ML101EF的Datasheet PDF文件第4页浏览型号AM29LV640ML101EF的Datasheet PDF文件第5页浏览型号AM29LV640ML101EF的Datasheet PDF文件第6页浏览型号AM29LV640ML101EF的Datasheet PDF文件第7页 
Am29LV640MH/L  
Data Sheet  
RETIRED  
PRODUCT  
This product has been retired and is not available for designs. For new and current designs,  
S29GL064A supersedes Am29LV640M H/L and is the factory-recommended migration path. Please  
refer to the S29GL064A datasheet for specifications and ordering information. Availability of this  
document is retained for reference and historical purposes only.  
April 2005  
The following document specifies Spansion memory products that are now offered by both Advanced  
Micro Devices and Fujitsu. Although the document is marked with the name of the company that  
originally developed the specification, these products will be offered to customers of both AMD and  
Fujitsu.  
Continuity of Specifications  
There is no change to this datasheet as a result of offering the device as a Spansion product. Any  
changes that have been made are the result of normal datasheet improvement and are noted in the  
document revision summary, where supported. Future routine revisions will occur when appro-  
priate, and changes will be noted in a revision summary.  
For More Information  
Please contact your local AMD or Fujitsu sales office for additional information about Spansion  
memory solutions.  
Publication Number 26191 Revision F Amendment +3 Issue Date December 14, 2005  

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