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AM29LV160DB-90SE PDF预览

AM29LV160DB-90SE

更新时间： 2024-11-05 05:29:23
品牌 Logo 应用领域
超微 - AMD 闪存内存集成电路光电二极管
页数 文件大小 规格书
49页 1108K
描述
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

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AM29LV160DB-90SE 技术参数

是否Rohs认证： 不符合生命周期：Transferred
零件包装代码：SOIC包装说明：SOP, SOP44,.63
针数：44Reach Compliance Code：unknown
风险等级：5.16最长访问时间：90 ns
备用内存宽度：8启动块：BOTTOM
命令用户界面：YES通用闪存接口：YES
数据轮询：YESJESD-30 代码：R-PDSO-G44
JESD-609代码：e0长度：28.2 mm
内存密度：16777216 bit内存集成电路类型：FLASH
内存宽度：16功能数量：1
部门数/规模：1,2,1,31端子数量：44
字数：1048576 words字数代码：1000000
工作模式：ASYNCHRONOUS最高工作温度：125 °C
最低工作温度：-55 °C组织：1MX16
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP44,.63封装形状：RECTANGULAR
封装形式：SMALL OUTLINE并行/串行：PARALLEL
电源：3/3.3 V编程电压：3 V
认证状态：Not Qualified座面最大高度：2.8 mm
部门规模：16K,8K,32K,64K最大待机电流：0.00001 A
子类别：Flash Memories最大压摆率：0.03 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：MILITARY
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
切换位：YES类型：NOR TYPE
宽度：13.3 mmBase Number Matches：1

AM29LV160DB-90SE 数据手册

 浏览型号AM29LV160DB-90SE的Datasheet PDF文件第2页浏览型号AM29LV160DB-90SE的Datasheet PDF文件第3页浏览型号AM29LV160DB-90SE的Datasheet PDF文件第4页浏览型号AM29LV160DB-90SE的Datasheet PDF文件第5页浏览型号AM29LV160DB-90SE的Datasheet PDF文件第6页浏览型号AM29LV160DB-90SE的Datasheet PDF文件第7页 
Am29LV160D  
16 Megabit (2 M x 8-Bit/1 M x 16-Bit)  
CMOS 3.0 Volt-only Boot Sector Flash Memory  
DISTINCTIVE CHARACTERISTICS  
■ Single power supply operation  
■ Embedded Algorithms  
— Full voltage range: 2.7 to 3.6 volt read and write  
operations for battery-powered applications  
— Embedded Erase algorithm automatically  
preprograms and erases the entire chip or any  
combination of designated sectors  
— Regulated voltage range: 3.0 to 3.6 volt read and  
write operations and for compatibility with high  
performance 3.3 volt microprocessors  
— Embedded Program algorithm automatically  
writes and verifies data at specified addresses  
■ Manufactured on 0.23 µm process technology  
■ Minimum 1,000,000 write cycle guarantee  
per sector  
— Fully compatible with 0.32 µm Am29LV160B device  
■ 20-year data retention at 125°C  
— Reliable operation for the life of the system  
■ Package option  
■ High performance  
— Access times as fast as 70 ns  
■ Ultra low power consumption (typical values at  
— 48-ball FBGA  
5 MHz)  
— 48-pin TSOP  
— 200 nA Automatic Sleep mode current  
— 200 nA standby mode current  
— 9 mA read current  
— 44-pin SO  
■ CFI (Common Flash Interface) compliant  
— 20 mA program/erase current  
— Provides device-specific information to the  
system, allowing host software to easily  
reconfigure for different Flash devices  
■ Flexible sector architecture  
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and  
thirty-one 64 Kbyte sectors (byte mode)  
■ Compatibility with JEDEC standards  
— Pinout and software compatible with single-  
power supply Flash  
— One 8 Kword, two 4 Kword, one 16 Kword, and  
thirty-one 32 Kword sectors (word mode)  
— Superior inadvertent write protection  
— Supports full chip erase  
— Sector Protection features:  
■ Data# Polling and toggle bits  
A hardware method of locking a sector to prevent  
any program or erase operations within that sector  
— Provides a software method of detecting program  
or erase operation completion  
Sectors can be locked in-system or via  
programming equipment  
■ Ready/Busy# pin (RY/BY#)  
— Provides a hardware method of detecting  
program or erase cycle completion (not available  
on 44-pin SO)  
Temporary Sector Unprotect feature allows code  
changes in previously locked sectors  
■ Unlock Bypass Program Command  
■ Erase Suspend/Erase Resume  
— Reduces overall programming time when issuing  
multiple program command sequences  
— Suspends an erase operation to read data from,  
or program data to, a sector that is not being  
erased, then resumes the erase operation  
■ Top or bottom boot block configurations  
available  
■ Hardware reset pin (RESET#)  
— Hardware method to reset the device to reading  
array data  
This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data  
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.  
Publication# 22358  
Issue Date: November 10, 2000  
Rev: B Amendment/+3  
1234567...49

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与AM29LV160DB-90SE相关器件

型号 品牌 获取价格 描述 数据表
AM29LV160DB90SF SPANSION

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 		Flash, 1MX16, 90ns, PDSO44, LEAD FREE, MO-180AA, SOP-44
AM29LV160DB-90SF AMD

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 		16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160DB90SI SPANSION

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 		1MX16 FLASH 3V PROM, 90ns, PDSO44, SOP-44
AM29LV160DB-90SI AMD

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 		16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160DB90SK SPANSION

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 		1MX16 FLASH 3V PROM, 90ns, PDSO44, SOP-44
AM29LV160DB-90SK SPANSION

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 		Flash, 1MX16, 90ns, PDSO44, MO-180AA, SOP-44
AM29LV160DB90WCC SPANSION

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 		1MX16 FLASH 3V PROM, 90ns, PBGA48, 8 X 9 MM, 0.80 MM PITCH, FBGA-48
AM29LV160DB-90WCC AMD

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 		16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160DB90WCD SPANSION

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 		Flash, 1MX16, 90ns, PBGA48, 8 X 9 MM, 0.80 MM PITCH, LEAD FREE, FBGA-48
AM29LV160DB-90WCD AMD

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 		16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

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