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AM29LV128ML109EF PDF预览

AM29LV128ML109EF

更新时间： 2024-11-21 20:10:07
品牌 Logo 应用领域
飞索 - SPANSION 光电二极管内存集成电路
页数 文件大小 规格书
57页 1215K
描述
Flash, 8MX16, 100ns, PDSO56, MO-142B, TSOP-56

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AM29LV128ML109EF 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：TSOP1包装说明：MO-142B, TSOP-56
针数：56Reach Compliance Code：compliant
ECCN代码：3A991.B.1.AHTS代码：8542.32.00.51
风险等级：5.26最长访问时间：100 ns
备用内存宽度：8启动块：BOTTOM/TOP
JESD-30 代码：R-PDSO-G56JESD-609代码：e3
长度：18.4 mm内存密度：134217728 bit
内存集成电路类型：FLASH内存宽度：16
湿度敏感等级：3功能数量：1
端子数量：56字数：8388608 words
字数代码：8000000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：8MX16封装主体材料：PLASTIC/EPOXY
封装代码：TSOP1封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE并行/串行：PARALLEL
峰值回流温度（摄氏度）：260编程电压：3 V
认证状态：Not Qualified座面最大高度：1.2 mm
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
处于峰值回流温度下的最长时间：40类型：NOR TYPE
宽度：14 mmBase Number Matches：1

AM29LV128ML109EF 数据手册

 浏览型号AM29LV128ML109EF的Datasheet PDF文件第2页浏览型号AM29LV128ML109EF的Datasheet PDF文件第3页浏览型号AM29LV128ML109EF的Datasheet PDF文件第4页浏览型号AM29LV128ML109EF的Datasheet PDF文件第5页浏览型号AM29LV128ML109EF的Datasheet PDF文件第6页浏览型号AM29LV128ML109EF的Datasheet PDF文件第7页 
ADVANCE INFORMATION  
Am29LV128M  
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit 3.0 Volt-only  
Uniform Sector Flash Memory with Enhanced VersatileI/O Control  
DISTINCTIVE CHARACTERISTICS  
ARCHITECTURAL ADVANTAGES  
— 4-word/8-byte page read buffer  
— 16-word/32-byte write buffer  
■ Single power supply operation  
— 3 volt read, erase, and program operations  
■ Low power consumption (typical values at 3.0 V, 5  
MHz)  
■ Enhanced VersatileI/O control  
— 30 mA typical active read current  
— 50 mA typical erase/program current  
— 1 µA typical standby mode current  
— Device generates and tolerates voltages on all I/Os  
and control inputs as determined by the voltage on the  
VIO pin; operates from 1.65 to 3.6 V (see page 8)  
■ Manufactured on 0.23 µm MirrorBit process  
■ Package options  
— 56-pin TSOP  
technology  
■ SecSi (Secured Silicon) Sector region  
— 64-ball Fortified BGA  
— 128-word/256-byte sector for permanent, secure  
identification through an 8-word/16-byte random  
Electronic Serial Number, accessible through a  
command sequence  
SOFTWARE & HARDWARE FEATURES  
■ Software features  
— Program Suspend & Resume: read other sectors  
before programming operation is completed  
— May be programmed and locked at the factory or by  
the customer  
— Erase Suspend & Resume: read/program other  
sectors before an erase operation is completed  
■ Flexible sector architecture  
— Data# polling & toggle bits provide status  
— Two hundred fifty-six 32 Kword (64 Kbyte) sectors  
— Unlock Bypass Program command reduces overall  
multiple-word or byte programming time  
■ Compatibility with JEDEC standards  
— Provides pinout and software compatibility for  
single-power supply flash, and superior inadvertent  
write protection  
— CFI (Common Flash Interface) compliant: allows host  
system to identify and accommodate multiple flash  
devices  
■ Minimum 100,000 erase cycle guarantee per sector  
■ 20-year data retention at 125°C  
■ Hardware features  
— Sector Protection: hardware-level method of  
preventing write operations within a sector  
PERFORMANCE CHARACTERISTICS  
■ High performance  
— Temporary Sector Unprotect: VID-level method of  
changing code in locked sectors  
— 90 ns access time  
— WP#/ACC input accelerates programming time  
(when high voltage is applied) for greater throughput  
during system production. Protects first or last sector  
regardless of sector protection settings  
— 25 ns page read times  
— 0.4 s typical sector erase time  
— 5.9 µs typical write buffer word programming time:  
16-word/32-byte write buffer reduces overall  
programming time for multiple-word updates  
— Hardware reset input (RESET#) resets device  
— Ready/Busy# output (RY/BY#) detects program or  
erase cycle completion  
Publication# 25270 Rev: B Amendment/0  
Issue Date: July 1, 2002  
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data  
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.  
Refer to AMD’s Website (www.amd.com) for the latest information.  
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与AM29LV128ML109EF相关器件

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AM29LV128ML109EI SPANSION

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 		Flash, 8MX16, 100ns, PDSO56, MO-142B, TSOP-56
AM29LV128ML109FF SPANSION

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 		Flash, 8MX16, 100ns, PDSO56, REVERSE, MO-142B, TSOP-56
AM29LV128ML109FI SPANSION

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 		Flash, 8MX16, 100ns, PDSO56, REVERSE, MO-142B, TSOP-56
AM29LV128ML109PCF SPANSION

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 		Flash, 8MX16, 100ns, PBGA64, 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-64
AM29LV128ML109PCI SPANSION

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 		Flash, 8MX16, 100ns, PBGA64, 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-64
AM29LV128ML10RFIN SPANSION

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 		EEPROM Card, 8MX16, 100ns, Parallel, CMOS, PDSO56,
AM29LV128ML110EF AMD

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 		128 Megabit (8 M x 16-Bit/16 M x 8-Bit) Mirro
AM29LV128ML110EI AMD

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 		128 Megabit (8 M x 16-Bit/16 M x 8-Bit) Mirro
AM29LV128ML110FF AMD

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 		128 Megabit (8 M x 16-Bit/16 M x 8-Bit) Mirro
AM29LV128ML110FI AMD

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 		128 Megabit (8 M x 16-Bit/16 M x 8-Bit) Mirro

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