Datasheet > AM29F800BT-150FE

AM29F800BT-150FE

更新时间： 2024-11-20 05:29:19

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
39页	486K
描述
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AM29F800BT-150FE 数据手册

PRELIMINARY

Am29F800B

8 Megabit (1 M x 8-Bit/512 K x 16-Bit)

CMOS 5.0 Volt-only, Boot Sector Flash Memory

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

■ Top or bottom boot block configurations

available

— 5.0 Volt-only operation for read, erase, and

program operations

■ Embedded Algorithms

— Minimizes system level requirements

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

■ Manufactured on 0.35 µm process technology

— Compatible with 0.5 µm Am29F800 device

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

■ High performance

— Access times as fast as 55 ns

■ Minimum 1,000,000 program/erase cycles per

■ Low power consumption (typical values at 5

sector guaranteed

MHz)

■ Package option

— 48-pin TSOP

— 44-pin SO

— 1 µA standby mode current

— 20 mA read current (byte mode)

— 28 mA read current (word mode)

— 30 mA program/erase current

■ Compatibility with JEDEC standards

— Pinout and software compatible with single-

power-supply Flash

■ Flexible sector architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

fifteen 64 Kbyte sectors (byte mode)

— Superior inadvertent write protection

■ Data# Polling and toggle bits

— One 8 Kword, two 4 Kword, one 16 Kword, and

fifteen 32 Kword sectors (word mode)

— Provides a software method of detecting

program or erase operation completion

— Supports full chip erase

■ Ready/Busy# pin (RY/BY#)

— Sector Protection features:

— Provides a hardware method of detecting

program or erase cycle completion

A hardware method of locking a sector to

prevent any program or erase operations within

that sector

■ Erase Suspend/Erase Resume

Sectors can be locked via programming

equipment

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

■ Hardware reset pin (RESET#)

— Hardware method to reset the device to reading

array data

Publication# 21504 Rev: C Amendment/+1

Issue Date: April 1998

12 3 4 5 6 7...39

中文翻译

下载PDF

与AM29F800BT-150FE相关器件

型号	品牌	获取价格	描述	数据表
AM29F800BT-150FEB	AMD	获取价格	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F800BT-150FI	AMD	获取价格	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F800BT-150FIB	AMD	获取价格	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F800BT-150SC	AMD	获取价格	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F800BT-150SCB	AMD	获取价格	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F800BT-150SD	SPANSION	获取价格	Flash, 512KX16, 150ns, PDSO44, LEAD FREE, MO-180AA, SOP-44
AM29F800BT-150SE	AMD	获取价格	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F800BT-150SEB	AMD	获取价格	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F800BT-150SF	SPANSION	获取价格	Flash, 512KX16, 150ns, PDSO44, LEAD FREE, MO-180AA, SOP-44
AM29F800BT-150SI	AMD	获取价格	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory

与AM29F800BT-150FE相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

24
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

16
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

48
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

46

产品中心

服务支持

精选活动

关于我们

帮助中心

AM29F800BT-150FE

AM29F800BT-150FE 数据手册

与AM29F800BT-150FE相关器件

与AM29F800BT-150FE相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AM29F800BT-150FE

AM29F800BT-150FE 数据手册

与AM29F800BT-150FE相关器件

与AM29F800BT-150FE相关文章

您还可以找

您在本页遇到什么问题？