Datasheet > AM29F800BT-120DWI

AM29F800BT-120DWI

更新时间： 2024-11-20 05:29:19

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
9页	203K
描述
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1

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SUPPLEMENT

Am29F800B Known Good Die

8 Megabit (1 M x 8-Bit/512 K x 16-Bit)

CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 1

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

■ Top or bottom boot block configurations

available

— 5.0 Volt-only operation for read, erase, and

program operations

■ Embedded Algorithms

— Minimizes system level requirements

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

■ Manufactured on 0.35 µm process technology

— Compatible with 0.5 µm Am29F800 device

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

■ High performance

— 90 or 120 ns access time

■ Minimum 1,000,000 write cycles per sector

■ Low power consumption (typical values at 5

guaranteed

MHz)

■ Compatibility with JEDEC standards

— 1 µA standby mode current

— Pinout and software compatible with single-

power-supply Flash

— 20 mA read current (byte mode)

— 28 mA read current (word mode)

— 30 mA program/erase current

— Superior inadvertent write protection

■ Data# Polling and toggle bits

■ Flexible sector architecture

— Provides a software method of detecting

program or erase operation completion

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

fifteen 64 Kbyte sectors (byte mode)

■ Ready/Busy# pin (RY/BY#)

— One 8 Kword, two 4 Kword, one 16 Kword, and

fifteen 32 Kword sectors (word mode)

— Provides a hardware method of detecting

program or erase cycle completion

— Supports full chip erase

■ Erase Suspend/Erase Resume

— Sector Protection features:

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

A hardware method of locking a sector to

prevent any program or erase operations within

that sector

■ Hardware reset pin (RESET#)

Sectors can be locked via programming

equipment

— Hardware method to reset the device to reading

array data

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

5/4/98

Publication# 21631 Rev: A Amendment/+2

Issue Date: April 1998

12 3 4 5 6 7...9

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与AM29F800BT-120DWI相关器件

型号	品牌	获取价格	描述	数据表
AM29F800BT-120DWI1	AMD	获取价格	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Re
AM29F800BT-120DWI1	SPANSION	获取价格	Flash, 1MX8, 120ns
AM29F800BT-120DWI2	SPANSION	获取价格	Flash, 512KX16, 120ns, WAFER-44
AM29F800BT-120DWK2	SPANSION	获取价格	Flash, 512KX16, 120ns, WAFER-44
AM29F800BT-120EC	AMD	获取价格	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F800BT-120ECB	AMD	获取价格	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F800BT-120ED	AMD	获取价格	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F800BT-120EE	AMD	获取价格	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F800BT-120EEB	AMD	获取价格	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F800BT-120EF	AMD	获取价格	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory

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