Datasheet > AM29F400BT-120DGD1

AM29F400BT-120DGD1

更新时间： 2024-11-09 03:30:07

品牌	Logo	应用领域
飞索 - SPANSION		/
页数	文件大小	规格书
11页	147K
描述
Flash, 512KX8, 120ns,

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SUPPLEMENT

Am29F400B Known Good Die

4 Megabit (512 K x 8-Bit/256 K x 16-Bit)

CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 2

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

■ Embedded Algorithms

— 5.0 volt-only operation for read, erase, and

program operations

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

— Minimizes system level requirements

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

■ Manufactured on 0.32 µm process technology

— Compatible with 0.5 µm Am29F400 device

■ Minimum 1,000,000 write cycle per sector

■ High performance

guaranteed

— Acess time as fast as 70 ns

■ Compatibility with JEDEC standards

■ Low power consumption (typical values at

— Pinout and software compatible with single-

power-supply Flash

5 MHz)

— 1 µA standby mode current

— Superior inadvertent write protection

— 20 mA read current (byte mode)

— 28 mA read current (word mode)

— 30 mA program/erase current

■ Data# Polling and toggle bits

— Provides a software method of detecting program

or erase operation completion

■ Flexible sector architecture

■ Ready/Busy# pin (RY/BY#)

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

seven 64 Kbyte sectors (byte mode)

— Provides a hardware method of detecting

program or erase cycle completion

— One 8 Kword, two 4 Kword, one 16 Kword, and

seven 32 Kword sectors (word mode)

■ Erase Suspend/Erase Resume

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

— Supports full chip erase

— Sector Protection features:

A hardware method of locking a sector to prevent

any program or erase operations within that

sector

■ Hardware reset pin (RESET#)

— Hardware method to reset the device to reading

array data

Sectors can be locked via programming

equipment

■ 20-year data retention at 125°C

■ Tested to datasheet specifications at

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

temperature

■ Quality and reliability levels equivalent to

■ Top or bottom boot block configurations

standard packaged components

available

Publication# 21258 Rev: E Amendment/+2

Issue Date: June 14, 1999

12 3 4 5 6 7...11

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与AM29F400BT-120DGD1相关器件

型号	品牌	获取价格	描述	数据表
AM29F400BT-120DGD2	SPANSION	获取价格	Flash, 256KX16, 120ns, DIE-43
AM29F400BT-120DGE	AMD	获取价格	4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die
AM29F400BT-120DGE1	AMD	获取价格	4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die
AM29F400BT-120DGE2	AMD	获取价格	4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die
AM29F400BT-120DGE2	SPANSION	获取价格	Flash, 256KX16, 120ns, DIE-43
AM29F400BT-120DGF1	SPANSION	获取价格	Flash, 512KX8, 120ns,
AM29F400BT-120DGF2	SPANSION	获取价格	Flash, 256KX16, 120ns, DIE-43
AM29F400BT-120DGI	AMD	获取价格	4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die
AM29F400BT-120DGI1	SPANSION	获取价格	Flash, 512KX8, 120ns,
AM29F400BT-120DGI1	AMD	获取价格	4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die

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