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AM29F160DB75EC PDF预览

AM29F160DB75EC

更新时间: 2024-11-08 04:49:15
品牌 Logo 应用领域
飞索 - SPANSION 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
47页 1398K
描述
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory

AM29F160DB75EC 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:TSOP1
包装说明:MO-142BDD, TSOP-48针数:48
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.28
Is Samacsys:N最长访问时间:70 ns
其他特性:CAN BE CONFG AS 2M X 8; BOTTOM BOOT BLOCK备用内存宽度:8
启动块:BOTTOM命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-PDSO-G48JESD-609代码:e0
长度:18.4 mm内存密度:16777216 bit
内存集成电路类型:FLASH内存宽度:16
湿度敏感等级:3功能数量:1
部门数/规模:1,2,1,31端子数量:48
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:1MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP48,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):240电源:5 V
编程电压:5 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:16K,8K,32K,64K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.05 mA
最大供电电压 (Vsup):5.25 V最小供电电压 (Vsup):4.75 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30切换位:YES
类型:NOR TYPE宽度:12 mm
最长写入周期时间 (tWC):70 msBase Number Matches:1

AM29F160DB75EC 数据手册

 浏览型号AM29F160DB75EC的Datasheet PDF文件第2页浏览型号AM29F160DB75EC的Datasheet PDF文件第3页浏览型号AM29F160DB75EC的Datasheet PDF文件第4页浏览型号AM29F160DB75EC的Datasheet PDF文件第5页浏览型号AM29F160DB75EC的Datasheet PDF文件第6页浏览型号AM29F160DB75EC的Datasheet PDF文件第7页 
Am29F160D  
Data Sheet  
The following document contains information on Spansion memory products.  
Continuity of Specifications  
There is no change to this data sheet as a result of offering the device as a Spansion product. Any  
changes that have been made are the result of normal data sheet improvement and are noted in the  
document revision summary.  
For More Information  
Please contact your local sales office for additional information about Spansion memory solutions.  
Publication Number Am29F160D_00 Revision D Amendment 6 Issue Date November 2, 2006  

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