5秒后页面跳转
AM29F040B-120JCB PDF预览

AM29F040B-120JCB

更新时间: 2024-11-07 22:15:07
品牌 Logo 应用领域
超微 - AMD /
页数 文件大小 规格书
30页 372K
描述
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory

AM29F040B-120JCB 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:QFJ包装说明:QCCJ, LDCC32,.5X.6
针数:32Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.26最长访问时间:120 ns
其他特性:1000K PROGRAM/ERASE CYCLES; DATA RETENTION 20 YEARS命令用户界面:YES
数据轮询:YES数据保留时间-最小值:20
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PQCC-J32
JESD-609代码:e0长度:13.97 mm
内存密度:4194304 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
部门数/规模:8端子数量:32
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:512KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:QCCJ封装等效代码:LDCC32,.5X.6
封装形状:RECTANGULAR封装形式:CHIP CARRIER
并行/串行:PARALLEL电源:5 V
编程电压:5 V认证状态:Not Qualified
座面最大高度:3.55 mm部门规模:64K
最大待机电流:0.000005 A子类别:Flash Memories
最大压摆率:0.04 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:J BEND端子节距:1.27 mm
端子位置:QUAD切换位:YES
类型:NOR TYPE宽度:11.43 mm
Base Number Matches:1

AM29F040B-120JCB 数据手册

 浏览型号AM29F040B-120JCB的Datasheet PDF文件第2页浏览型号AM29F040B-120JCB的Datasheet PDF文件第3页浏览型号AM29F040B-120JCB的Datasheet PDF文件第4页浏览型号AM29F040B-120JCB的Datasheet PDF文件第5页浏览型号AM29F040B-120JCB的Datasheet PDF文件第6页浏览型号AM29F040B-120JCB的Datasheet PDF文件第7页 
PRELIMINARY  
Am29F040B  
4 Megabit (512 K x 8-Bit)  
CMOS 5.0 Volt-only, Uniform Sector Flash Memory  
Distinctive Characteristics  
5.0 V ± 10% for read and write operations  
Embedded Algorithms  
— Minimizes system level power requirements  
— Embedded Erase algorithm automatically  
preprograms and erases the entire chip or any  
combination of designated sectors  
Manufactured on 0.35 µm process technology  
— Compatible with 0.5 µm Am29F040 device  
— Embedded Program algorithm automatically  
writes and verifies bytes at specified addresses  
High performance  
— Access times as fast as 55 ns  
Minimum 1,000,000 program/erase cycles per  
sector guaranteed  
Low power consumption  
Package options  
— 20 mA typical active read current  
— 30 mA typical program/erase current  
— 32-pin PLCC, TSOP, or PDIP  
— 1 µA typical standby current (standard access  
time to active mode)  
Compatible with JEDEC standards  
— Pinout and software compatible with  
single-power-supply Flash standard  
Flexible sector architecture  
— 8 uniform sectors of 64 Kbytes each  
— Any combination of sectors can be erased  
— Supports full chip erase  
— Superior inadvertent write protection  
Data# Polling and toggle bits  
— Provides a software method of detecting  
program or erase cycle completion  
— Sector protection:  
A hardware method of locking sectors to prevent  
any program or erase operations within that  
sector  
Erase Suspend/Erase Resume  
— Suspends a sector erase operation to read data  
from, or program data to, a non-erasing sector,  
then resumes the erase operation  
Publication# 21445 Rev: B Amendment/+2  
Issue Date: April 1998  

与AM29F040B-120JCB相关器件

型号 品牌 获取价格 描述 数据表
AM29F040B-120JD AMD

获取价格

4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F040B-120JDB SPANSION

获取价格

Flash, 512KX8, 120ns, PQCC32, PLASTIC, LCC-32
AM29F040B-120JE AMD

获取价格

4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F040B-120JEB AMD

获取价格

4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F040B-120JF AMD

获取价格

4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F040B-120JFB SPANSION

获取价格

Flash, 512KX8, 120ns, PQCC32, PLASTIC, LCC-32
AM29F040B-120JI AMD

获取价格

4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F040B-120JIB AMD

获取价格

4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F040B-120JK AMD

获取价格

4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F040B-120JKB SPANSION

获取价格

Flash, 512KX8, 120ns, PQCC32, PLASTIC, LCC-32