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AM29F016-120EIB PDF预览

AM29F016-120EIB

更新时间： 2024-11-26 20:20:59
品牌 Logo 应用领域
飞索 - SPANSION 光电二极管内存集成电路
页数 文件大小 规格书
36页 224K
描述
Flash, 2MX8, 120ns, PDSO48, TSOP-48

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中文翻译

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AM29F016-120EIB 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TSOP包装说明：TSOP-48
针数：48Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.8Is Samacsys：N
最长访问时间：120 ns命令用户界面：YES
数据轮询：YESJESD-30 代码：R-PDSO-G48
长度：18.4 mm内存密度：16777216 bit
内存集成电路类型：FLASH内存宽度：8
湿度敏感等级：1功能数量：1
部门数/规模：32端子数量：48
字数：2097152 words字数代码：2000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：2MX8
封装主体材料：PLASTIC/EPOXY封装代码：TSSOP
封装等效代码：TSSOP48,.8,20封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行：PARALLEL
峰值回流温度（摄氏度）：225电源：5 V
编程电压：5 V认证状态：Not Qualified
就绪/忙碌：YES座面最大高度：1.2 mm
部门规模：64K最大待机电流：0.000005 A
子类别：Flash Memories最大压摆率：0.04 mA
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
切换位：YES类型：NOR TYPE
宽度：12 mmBase Number Matches：1

AM29F016-120EIB 数据手册

 浏览型号AM29F016-120EIB的Datasheet PDF文件第2页浏览型号AM29F016-120EIB的Datasheet PDF文件第3页浏览型号AM29F016-120EIB的Datasheet PDF文件第4页浏览型号AM29F016-120EIB的Datasheet PDF文件第5页浏览型号AM29F016-120EIB的Datasheet PDF文件第6页浏览型号AM29F016-120EIB的Datasheet PDF文件第7页 
FINAL  
Am29F016  
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only,  
Sector Erase Flash Memory  
DISTINCTIVE CHARACTERISTICS  
■ 5.0 Volt ± 10% for read and write operations  
— Minimizes system level power requirements  
■ Compatible with JEDEC-standards  
■ Embedded Program Algorithms  
— Automatically programs and verifies data at  
specified address  
■ Data Polling and Toggle Bit feature for  
detection of program or erase cycle  
completion  
— Pinout and software compatible with  
single-power supply Flash  
— Superior inadvertent write protection  
■ 48-pin TSOP  
■ Ready/Busy output (RY/BY)  
— Hardware method for detection of program or  
erase cycle completion  
■ 44-pin SO  
■ Minimum 100,000 write/erase cycles  
■ Erase Suspend/Resume  
guaranteed  
— Supports reading or programming data to a  
■ High performance  
sector not being erased  
— 70 ns maximum access time  
■ Sector erase architecture  
— Uniform sectors of 64 Kbytes each  
■ Low power consumption  
— 25 mA typical active read current  
— 30 mA typical program/erase current  
— Any combination of sectors can be erased.  
Also supports full chip erase  
■ Enhanced power management for standby  
mode  
■ Group sector protection  
— <1 µA typical standby current  
— Hardware method that disables any combination  
of sector groups from write or erase operations  
(a sector group consists of 4 adjacent sectors of  
64 Kbytes each)  
— Standard access time from standby mode  
■ Hardware RESET pin  
— Resets internal state machine to the read mode  
■ Embedded Erase Algorithms  
— Automatically pre-programs and erases the chip  
or any sector  
GENERAL DESCRIPTION  
The Am29F016 is a 16 Mbit, 5.0 Volt-only Flash memory  
organized as 2 Megabytes of 8 bits each. The 2 Mbytes  
of data is divided into 32 sectors of 64 Kbytes for flexible  
erase capability. The 8 bits of data appear on DQ0–DQ7.  
The Am29F016 is offered in 48-pin TSOP and 44-pin SO  
packages. This device is designed to be programmed  
in-system with the standard system 5.0 Volt VCC supply.  
12.0 Volt VPP is not required for program or erase  
operations. The device can also be reprogrammed in  
standard EPROM programmers.  
chip enable (CE), write enable (WE), and output  
enable (OE) controls.  
The Am29F016 is entirely command set compatible  
with the JEDEC single-power supply Flash standard.  
Commands are written to the command register using  
standard microprocessor write timings. Register  
contents serve as input to an internal state-machine  
that controls the erase and programming circuitry.  
Write cycles also internally latch addresses and data  
needed for the programming and erase operations.  
Reading data out of the device is similar to reading  
from 12.0 Volt Flash or EPROM devices.  
The standard Am29F016 offers access times of 70  
ns, 90 ns, 120 ns, and 150 ns, allowing high-speed  
microprocessors to operate without wait states. To  
eliminate bus contention, the device has separate  
The Am29F016 is programmed by executing the pro-  
gram command sequence. This will invoke the Embed-  
Publication# 18805 Rev: D Amendment/0  
Issue Date: April 1997  
1234567...36

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与AM29F016-120EIB相关器件

型号 品牌 获取价格 描述 数据表
AM29F016-120FC AMD

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 		16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F016-120FC SPANSION

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 		Flash, 2MX8, 120ns, PDSO44, SOP-44
AM29F016-120FCB AMD

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 		16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F016-120FCB SPANSION

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 		Flash, 2MX8, 120ns, PDSO44, SOP-44
AM29F016-120FE ETC

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 		x8 Flash EEPROM
AM29F016-120FEB ETC

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 		x8 Flash EEPROM
AM29F016-120FI AMD

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 		16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F016-120FI SPANSION

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 		Flash, 2MX8, 120ns, PDSO48, TSOP-48
AM29F016-120FIB AMD

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 		16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F016-120FIB SPANSION

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 		Flash, 2MX8, 120ns, PDSO48, TSOP-48

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