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AM29F016-120ECB PDF预览

AM29F016-120ECB

更新时间: 2024-11-25 23:04:19
品牌 Logo 应用领域
超微 - AMD 闪存
页数 文件大小 规格书
36页 220K
描述
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory

AM29F016-120ECB 数据手册

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FINAL  
Am29F016  
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only,  
Sector Erase Flash Memory  
DISTINCTIVE CHARACTERISTICS  
5.0 Volt ± 10% for read and write operations  
— Minimizes system level power requirements  
Compatible with JEDEC-standards  
Embedded Program Algorithms  
— Automatically programs and verifies data at  
specified address  
Data Polling and Toggle Bit feature for  
detection of program or erase cycle  
completion  
— Pinout and software compatible with  
single-power supply Flash  
— Superior inadvertent write protection  
48-pin TSOP  
Ready/Busy output (RY/BY)  
— Hardware method for detection of program or  
erase cycle completion  
44-pin SO  
Minimum 100,000 write/erase cycles  
Erase Suspend/Resume  
guaranteed  
— Supports reading or programming data to a  
High performance  
sector not being erased  
— 70 ns maximum access time  
Sector erase architecture  
— Uniform sectors of 64 Kbytes each  
Low power consumption  
— 25 mA typical active read current  
— 30 mA typical program/erase current  
— Any combination of sectors can be erased.  
Also supports full chip erase  
Enhanced power management for standby  
mode  
Group sector protection  
— <1 µA typical standby current  
— Hardware method that disables any combination  
of sector groups from write or erase operations  
(a sector group consists of 4 adjacent sectors of  
64 Kbytes each)  
— Standard access time from standby mode  
Hardware RESET pin  
— Resets internal state machine to the read mode  
Embedded Erase Algorithms  
— Automatically pre-programs and erases the chip  
or any sector  
GENERAL DESCRIPTION  
The Am29F016 is a 16 Mbit, 5.0 Volt-only Flash memory  
organized as 2 Megabytes of 8 bits each. The 2 Mbytes  
of data is divided into 32 sectors of 64 Kbytes for flexible  
erase capability. The 8 bits of data appear on DQ0–DQ7.  
The Am29F016 is offered in 48-pin TSOP and 44-pin SO  
packages. This device is designed to be programmed  
in-system with the standard system 5.0 Volt VCC supply.  
12.0 Volt VPP is not required for program or erase  
operations. The device can also be reprogrammed in  
standard EPROM programmers.  
chip enable (CE), write enable (WE), and output  
enable (OE) controls.  
The Am29F016 is entirely command set compatible  
with the JEDEC single-power supply Flash standard.  
Commands are written to the command register using  
standard microprocessor write timings. Register  
contents serve as input to an internal state-machine  
that controls the erase and programming circuitry.  
Write cycles also internally latch addresses and data  
needed for the programming and erase operations.  
Reading data out of the device is similar to reading  
from 12.0 Volt Flash or EPROM devices.  
The standard Am29F016 offers access times of 70  
ns, 90 ns, 120 ns, and 150 ns, allowing high-speed  
microprocessors to operate without wait states. To  
eliminate bus contention, the device has separate  
The Am29F016 is programmed by executing the pro-  
gram command sequence. This will invoke the Embed-  
Publication# 18805 Rev: D Amendment/0  
Issue Date: April 1997  

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