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AM29DS320GB120WMIN PDF预览

AM29DS320GB120WMIN

更新时间: 2024-11-27 04:49:15
品牌 Logo 应用领域
飞索 - SPANSION 闪存内存集成电路
页数 文件大小 规格书
54页 713K
描述
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory

AM29DS320GB120WMIN 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:6 X 12 MM, 0.80 MM PITCH, FBGA-48
针数:48Reach Compliance Code:not_compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.83最长访问时间:120 ns
备用内存宽度:8启动块:BOTTOM
命令用户界面:YES通用闪存接口:YES
数据轮询:YESJESD-30 代码:R-PBGA-B48
JESD-609代码:e0长度:12 mm
内存密度:33554432 bit内存集成电路类型:FLASH
内存宽度:16湿度敏感等级:3
功能数量:1部门数/规模:8,63
端子数量:48字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2MX16封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA48,6X8,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):240
电源:2 V编程电压:1.8 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:8K,64K
最大待机电流:0.000005 A子类别:Flash Memories
最大压摆率:0.025 mA最大供电电压 (Vsup):2.2 V
最小供电电压 (Vsup):1.8 V标称供电电压 (Vsup):2 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
切换位:YES类型:NOR TYPE
宽度:6 mmBase Number Matches:1

AM29DS320GB120WMIN 数据手册

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For More Information  
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Publication Number 26492 Revision A Amendment +1 Issue Date January 27, 2003  

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