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AM29DS320GB120EE PDF预览

AM29DS320GB120EE

更新时间: 2024-11-24 04:49:15
品牌 Logo 应用领域
飞索 - SPANSION 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
54页 713K
描述
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory

AM29DS320GB120EE 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP1包装说明:MO-142DD, TSOP-48
针数:48Reach Compliance Code:not_compliant
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.51
风险等级:5.83Is Samacsys:N
最长访问时间:120 ns备用内存宽度:8
启动块:BOTTOM命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-PDSO-G48JESD-609代码:e0
长度:18.4 mm内存密度:33554432 bit
内存集成电路类型:FLASH内存宽度:16
湿度敏感等级:3功能数量:1
部门数/规模:8,63端子数量:48
字数:2097152 words字数代码:2000000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:2MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP48,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):240电源:2 V
编程电压:1.8 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:8K,64K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.025 mA
最大供电电压 (Vsup):2.2 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):2 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30切换位:YES
类型:NOR TYPE宽度:12 mm
Base Number Matches:1

AM29DS320GB120EE 数据手册

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Publication Number 26492 Revision A Amendment +1 Issue Date January 27, 2003  

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