Datasheet > 存储 > 闪存> AM29DL163DT120EK

AM29DL163DT120EK

更新时间： 2024-11-14 03:10:11

品牌	Logo	应用领域
飞索 - SPANSION		光电二极管存储闪存
页数	文件大小	规格书
52页	986K
描述
Flash, 1MX16, 120ns, PDSO48, MO-142DD, TSOP-48

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AM29DL163DT120EK 数据手册

Am29DL162D/163D/164D

16 Megabit (2 M x 8-Bit/1 M x 16-Bit)

CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

DISTINCTIVE CHARACTERISTICS

ARCHITECTURAL ADVANTAGES

■ Minimum 1 million write cycles guaranteed per sector

■ Simultaneous Read/Write operations

■ 20 Year data retention at 125°C

— Data can be continuously read from one bank while

executing erase/program functions in other bank

— Reliable operation for the life of the system

SOFTWARE FEATURES

— Zero latency between read and write operations

■ Data Management Software (DMS)

■ Multiple bank architectures

— AMD-supplied software manages data programming

and erasing, enabling EEPROM emulation

— Three devices available with different bank sizes (refer

to Table 2)

— Eases sector erase limitations

■ SecSi (Secured Silicon) Sector: Extra 64 KByte

■ Supports Common Flash Memory Interface (CFI)

sector

■ Erase Suspend/Erase Resume

— Suspends erase operations to allow programming in

same bank

— Factory locked and identifiable: 16 bytes available for

secure, random factory Electronic Serial Number;

verifiable as factory locked through autoselect

function. ExpressFlash option allows entire sector to

be available for factory-secured data

■ Data# Polling and Toggle Bits

— Provides a software method of detecting the status of

program or erase cycles

— Customer lockable: Can be read, programmed, or

erased just like other sectors. Once locked, data

cannot be changed

■ Unlock Bypass Program command

— Reduces overall programming time when issuing

multiple program command sequences

■ Zero Power Operation

— Sophisticated power management circuits reduce

power consumed during inactive periods to nearly

zero

HARDWARE FEATURES

■ Any combination of sectors can be erased

■ Package options

— 48-ball FBGA

— 48-pin TSOP

■ Ready/Busy# output (RY/BY#)

— Hardware method for detecting program or erase

cycle completion

■ Top or bottom boot block

■ Hardware reset pin (RESET#)

— Hardware method of resetting the internal state

machine to reading array data

■ Manufactured on 0.23 µm process technology

— Compatible with Am29DL16xC devices

■ Compatible with JEDEC standards

■ WP#/ACC input pin

— Write protect (WP#) function allows protection of two

outermost boot sectors, regardless of sector protect status

— Pinout and software compatible with

single-power-supply flash standard

— Acceleration (ACC) function accelerates program

timing

PERFORMANCE CHARACTERISTICS

■ Sector protection

■ High performance

— Hardware method of locking a sector, either

in-system or using programming equipment, to

prevent any program or erase operation within that

sector

— Access time as fast 70 ns

— Program time: 7 µs/word typical utilizing Accelerate function

■ Ultra low power consumption (typical values)

— 2 mA active read current at 1 MHz

— Temporary Sector Unprotect allows changing data in

protected sectors in-system

— 10 mA active read current at 5 MHz

— 200 nA in standby or automatic sleep mode

Publication# 21533 Rev: D Amendment/+3

Issue Date: November 22, 2000

This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

Refer to AMD’s Website (www.amd.com) for the latest information.

12 3 4 5 6 7...52

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与AM29DL163DT120EK相关器件

型号	品牌	获取价格	描述	数据表
AM29DL163DT120PC	SPANSION	获取价格	Flash, 1MX16, 120ns, PBGA64, 13 X 11 MM, 1.0 MM PITCH, FBGA-64
AM29DL163DT120PCF	AMD	获取价格	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem
AM29DL163DT120PCF	SPANSION	获取价格	Flash, 1MX16, 120ns, PBGA64, 13 X 11 MM, 1.0 MM PITCH, LEAD FREE, FBGA-64
AM29DL163DT120PCI	AMD	获取价格	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem
AM29DL163DT120PCI	SPANSION	获取价格	Flash, 1MX16, 120ns, PBGA64, 13 X 11 MM, 1.0 MM PITCH, FBGA-64
AM29DL163DT120VR	SPANSION	获取价格	Flash, 1MX16, 120ns, PBGA48, 8.15 X 6.15 MM, 0.80 MM PITCH, VBGA-48
AM29DL163DT120VRF	AMD	获取价格	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem
AM29DL163DT120VRI	AMD	获取价格	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem
AM29DL163DT120WC	SPANSION	获取价格	Flash, 1MX16, 120ns, PBGA48, 8 X 9 MM, 0.80 MM PITCH, FBGA-48
AM29DL163DT120WCE	ETC	获取价格	x8/x16 Flash EEPROM

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