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AM29BDS640GBD3WSI PDF预览

AM29BDS640GBD3WSI

更新时间: 2024-11-23 22:14:59
品牌 Logo 应用领域
飞索 - SPANSION 闪存存储内存集成电路
页数 文件大小 规格书
65页 845K
描述
64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory

AM29BDS640GBD3WSI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:TFBGA, BGA80,8X12,32
针数:80Reach Compliance Code:compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.83Is Samacsys:N
最长访问时间:14 ns其他特性:SYNCHRONOUS BURST ACCESS ALSO POSSIBLE
启动块:BOTTOM命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-PBGA-B80JESD-609代码:e0
长度:11.95 mm内存密度:67108864 bit
内存集成电路类型:FLASH内存宽度:16
湿度敏感等级:3功能数量:1
部门数/规模:8,126端子数量:80
字数:4194304 words字数代码:4000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:4MX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA80,8X12,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):240电源:1.8,3 V
编程电压:1.8 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:8K,32K最大待机电流:0.00001 A
子类别:Flash Memories最大压摆率:0.06 mA
最大供电电压 (Vsup):1.95 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN LEAD端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:30切换位:YES
类型:NOR TYPE宽度:10.95 mm
Base Number Matches:1

AM29BDS640GBD3WSI 数据手册

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