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AM29BDS640GBC9WSI PDF预览

AM29BDS640GBC9WSI

更新时间: 2024-11-19 22:27:23
品牌 Logo 应用领域
飞索 - SPANSION 闪存内存集成电路
页数 文件大小 规格书
65页 845K
描述
64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory

AM29BDS640GBC9WSI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:TFBGA, BGA80,8X12,32
针数:80Reach Compliance Code:compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.83最长访问时间:20 ns
其他特性:SYNCHRONOUS BURST ACCESS ALSO POSSIBLE启动块:BOTTOM
命令用户界面:YES通用闪存接口:YES
数据轮询:YESJESD-30 代码:R-PBGA-B80
JESD-609代码:e0长度:11.95 mm
内存密度:67108864 bit内存集成电路类型:FLASH
内存宽度:16湿度敏感等级:3
功能数量:1部门数/规模:8,126
端子数量:80字数:4194304 words
字数代码:4000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:4MX16封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA80,8X12,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):240
电源:1.8 V编程电压:1.8 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:8K,32K
最大待机电流:0.00001 A子类别:Flash Memories
最大压摆率:0.06 mA最大供电电压 (Vsup):1.95 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
切换位:YES类型:NOR TYPE
宽度:10.95 mmBase Number Matches:1

AM29BDS640GBC9WSI 数据手册

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