5秒后页面跳转
AM27C512-120DE PDF预览

AM27C512-120DE

更新时间: 2024-09-23 22:56:31
品牌 Logo 应用领域
超微 - AMD 可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
12页 162K
描述
512 Kilobit (64 K x 8-Bit) CMOS EPROM

AM27C512-120DE 数据手册

 浏览型号AM27C512-120DE的Datasheet PDF文件第2页浏览型号AM27C512-120DE的Datasheet PDF文件第3页浏览型号AM27C512-120DE的Datasheet PDF文件第4页浏览型号AM27C512-120DE的Datasheet PDF文件第5页浏览型号AM27C512-120DE的Datasheet PDF文件第6页浏览型号AM27C512-120DE的Datasheet PDF文件第7页 
FINAL  
Am27C512  
512 Kilobit (64 K x 8-Bit) CMOS EPROM  
DISTINCTIVE CHARACTERISTICS  
Fast access time  
Latch-up protected to 100 mA from –1 V to  
VCC + 1 V  
— Speed options as fast as 55 ns  
Low power consumption  
High noise immunity  
Versatile features for simple interfacing  
— Both CMOS and TTL input/output compatibility  
Two line control functions  
— 20 µA typical CMOS standby current  
JEDEC-approved pinout  
Single +5 V power supply  
Standard 28-pin DIP, PDIP, and 32-pin PLCC  
±10% power supply tolerance standard  
100% Flashrite™ programming  
Typical programming time of 8 seconds  
packages  
GENERAL DESCRIPTION  
The Am27C512 is a 512-Kbit, ultraviolet erasable pro-  
grammable read-only memory. It is organized as 64K  
words by 8 bits per word, operates from a single +5 V  
supply, has a static standby mode, and features fast  
single address location programming. Products are  
available in windowed ceramic DIP packages, as well  
as plastic one time programmable (OTP) PDIP and  
PLCC packages.  
thus eliminating bus contention in a multiple bus micro-  
processor system.  
AMD’s CMOS process technology provides high  
speed, low power, and high noise immunity. Typical  
power consumption is only 80 mW in active mode, and  
100 µW in standby mode.  
All signals are TTL levels, including programming sig-  
nals. Bit locations may be programmed singly, in  
blocks, or at random. The device supports AMD’s  
Flashrite programming algorithm (100 µs pulses), re-  
sulting in a typical programming time of 8 seconds.  
Data can be typically accessed in less than 55 ns, al-  
lowing high-performance microprocessors to operate  
without any WAIT states. The device offers separate  
Output Enable (OE#) and Chip Enable (CE#) controls,  
BLOCK DIAGRAM  
Data Outputs  
DQ0–DQ7  
V
V
CC  
SS  
Output Enable  
Chip Enable  
and  
OE#/V  
PP  
Output  
Buffers  
CE#  
Prog Logic  
Y
Y
Gating  
Decoder  
A0–A15  
Address  
Inputs  
524,288  
Bit Cell  
Matrix  
X
Decoder  
08140I-1  
Publication# 08140 Rev: I Amendment/0  
Issue Date: May 1998  

与AM27C512-120DE相关器件

型号 品牌 获取价格 描述 数据表
AM27C512-120DEB AMD

获取价格

512 Kilobit (64 K x 8-Bit) CMOS EPROM
AM27C512-120DEB ROCHESTER

获取价格

512 Kilobit ( 64 K x 8-Bit ) CMOS EPROM Speed options as fast as 55 ns
AM27C512-120DEB SPANSION

获取价格

UVPROM, 64KX8, 120ns, CMOS, CDIP28, CERAMIC, DIP-28
AM27C512-120DI ROCHESTER

获取价格

512 Kilobit ( 64 K x 8-Bit ) CMOS EPROM Speed options as fast as 55 ns
AM27C512-120DI AMD

获取价格

512 Kilobit (64 K x 8-Bit) CMOS EPROM
AM27C512-120DIB AMD

获取价格

512 Kilobit (64 K x 8-Bit) CMOS EPROM
AM27C512-120DIB ROCHESTER

获取价格

512 Kilobit ( 64 K x 8-Bit ) CMOS EPROM Speed options as fast as 55 ns
AM27C512-120EC ROCHESTER

获取价格

512 Kilobit ( 64 K x 8-Bit ) CMOS EPROM Speed options as fast as 55 ns
AM27C512-120EI ROCHESTER

获取价格

512 Kilobit ( 64 K x 8-Bit ) CMOS EPROM Speed options as fast as 55 ns
AM27C512-120JC ROCHESTER

获取价格

512 Kilobit ( 64 K x 8-Bit ) CMOS EPROM Speed options as fast as 55 ns