Datasheet > AM27C040200DC

AM27C040200DC

更新时间： 2024-11-18 23:28:47

品牌	Logo	应用领域
其他 - ETC		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
13页	58K
描述
IC-4MB CMOS EPROM

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中文翻译

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数据手册

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AM27C040200DC 数据手册

FINAL

Am27C040

4 Megabit (524,288 x 8-Bit) CMOS EPROM

DISTINCTIVE CHARACTERISTICS

■ Fast access time

■ ±10% power supply tolerance standard on

most speeds

— 90 ns

■ 100% Flashrite™ programming

— Typical programming time of 1 minute

■ Latch-up protected to 100 mA from –1 V to

■ Low power consumption

— 100 µA maximum CMOS standby current

JEDEC-approved pinout

+ 1 V

— Plug in upgrade of 1 Mbit EPROM and 2 Mbit

EPROMs

■ High noise immunity

■ Compact 32-pin DIP, PDIP, PLCC,TSOP

— Easy upgrade from 28-pin JEDEC EPROMs

packages

■ Single +5 V power supply

GENERAL DESCRIPTION

The Am27C040 is a 4 Mbit ultraviolet erasable pro-

grammable read-only memory. It is organized as 512K

words by 8 bits per word, operates from a single +5 V

supply, has a static standby mode, and features fast

single address location programming. Products are

available in windowed ceramic DIP packages, as well

as plastic one-time programmable (OTP) packages.

(CE) controls, thus eliminating bus contention in a mul-

tiple bus microprocessor system.

AMD’s CMOS process technology provides high

speed, low power, and high noise immunity. Typical

power consumption is only 100 mW in active mode,

and 100µW in standby mode.

All signals are TTL levels, including programming sig-

nals. Bit locations may be programmed singly, in

blocks, or at random. The Am27C040 supports AMD’s

Flashrite programming algorithm (100 µs pulses) re-

sulting in typical programming time of 1 minute.

Typically, any byte can be accessed in less than 90 ns,

allowing operation with high-performance micropro-

cessors without any WAIT states. The Am27C040 of-

fers separate Output Enable (OE) and Chip Enable

BLOCK DIAGRAM

Data Outputs

DQ0–DQ7

Output Enable

Chip Enable

and

Output

Buffers

Prog Logic

CE/PGM

Gating

Decoder

A0–A18

Address

Inputs

4,194,304-Bit

Cell Matrix

Decoder

14971E-1

Publication# 14971 Rev: E Amendment/+1

Issue Date: July 1997

12 3 4 5 6 7...13

中文翻译

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与AM27C040200DC相关器件

型号	品牌	获取价格	描述	数据表
AM27C040-200DC	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS EPROM
AM27C040-200DCB	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS EPROM
AM27C040-200DE	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS EPROM
AM27C040-200DE	SPANSION	获取价格	UVPROM, 512KX8, 200ns, CMOS, CDIP32, CERAMIC,DIP-32
AM27C040-200DEB	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS EPROM
AM27C040-200DI	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS EPROM
AM27C040-200DIB	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS EPROM
AM27C040-200EC	ETC	获取价格	x8 EPROM
AM27C040-200EI	ETC	获取价格	x8 EPROM
AM27C040-200JC	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS EPROM