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AM25P03-60D PDF预览

AM25P03-60D

更新时间: 2024-10-27 12:52:19
品牌 Logo 应用领域
ANALOGPOWER /
页数 文件大小 规格书
5页 180K
描述
P-Channel 30-V (D-S) MOSFET

AM25P03-60D 数据手册

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Analog Power  
AM25P03-60D  
P-Channel 30-V (D-S) MOSFET  
These miniature surface mount MOSFETs utilize  
High Cell Density process. Low rDS(on) assures  
minimal power loss and conserves energy, making  
this device ideal for use in power management  
circuitry. Typical applications are PWMDC-DC  
converters, power management in portable and  
battery-powered products such as computers,  
printers, battery charger, telecommunication power  
system, and telephones power system.  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) m()  
ID (A)  
24  
59 @ VGS = -4.5V  
95 @ VGS = -2.5V  
-26.5  
19  
Low rDS(on) Provides Higher Efficiency and  
Extends Battery Life  
Miniature TO-252 Surface Mount Package  
Saves Board Space  
High power and current handling capability  
Extended VGS range (±25) for battery pack  
applications  
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)  
Parameter Symbol Maximum Units  
Drain-Source Voltage  
VDS  
VGS  
ID  
-26.5  
±12  
V
Gate-Source Voltage  
Continuous Drain Currenta  
Pulsed Drain Currentb  
Continuous Source Current (Diode Conduction)a  
Power Dissipationa  
TA=25oC  
TA=25oC  
24  
±40  
-30  
50  
A
IDM  
IS  
A
W
oC  
PD  
Operating Junction and Storage Temperature Range  
TJ, Tstg -55 to 175  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambienta  
Maximum Junction-to-Case  
Symbol  
Maximum Units  
oC/W  
RθJA  
50  
oC/W  
3.0  
RθJC  
Notes  
a.  
b.  
Surface Mounted on 1” x 1” FR4 Board.  
Pulse width limited by maximum junction temperature  
1
Publication Order Number:  
DS-AM25P03-60_D  
May, 2005 - Rev. A  
PRELIMINARY  

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