Analog Power
AM25P03-60D
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
ID (A)
24
59 @ VGS = -4.5V
95 @ VGS = -2.5V
-26.5
19
•
•
Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
Miniature TO-252 Surface Mount Package
Saves Board Space
•
•
High power and current handling capability
Extended VGS range (±25) for battery pack
applications
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter Symbol Maximum Units
Drain-Source Voltage
VDS
VGS
ID
-26.5
±12
V
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
Power Dissipationa
TA=25oC
TA=25oC
24
±40
-30
50
A
IDM
IS
A
W
oC
PD
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case
Symbol
Maximum Units
oC/W
RθJA
50
oC/W
3.0
RθJC
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
1
Publication Order Number:
DS-AM25P03-60_D
May, 2005 - Rev. A
PRELIMINARY